Справочник MOSFET. NCE8290

 

NCE8290 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE8290
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 82 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 54.3 ns
   Cossⓘ - Выходная емкость: 630.6 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

NCE8290 Datasheet (PDF)

 ..1. Size:375K  ncepower
nce8290.pdfpdf_icon

NCE8290

Pb Free Producthttp://www.ncepower.com NCE8290NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =90A RDS(ON)

 0.1. Size:353K  ncepower
nce8290ac.pdfpdf_icon

NCE8290

http://www.ncepower.com NCE8290ACNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290AC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =90A RDS(ON)

 0.2. Size:352K  ncepower
nce8290b.pdfpdf_icon

NCE8290

Pb Free Producthttp://www.ncepower.com NCE8290BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =90A Schematic diagram RDS(ON)

 8.1. Size:612K  ncepower
nce8295ag.pdfpdf_icon

NCE8290

http://www.ncepower.comNCE8295AGNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE8295AG uses advanced trench technology and design V =82V,I =95ADS Dto provide excellent R with low gate charge. This device is R

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