NCE8295AI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE8295AI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 170 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 82 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 95 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 268 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Encapsulados: TO-251
Búsqueda de reemplazo de NCE8295AI MOSFET
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NCE8295AI datasheet
nce8295ai.pdf
Pb Free Product http //www.ncepower.com NCE8295AI NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AI uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =82V,I =95A DS D R
nce8295ag.pdf
http //www.ncepower.com NCE8295AG NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE8295AG uses advanced trench technology and design V =82V,I =95A DS D to provide excellent R with low gate charge. This device is R
nce8295a.pdf
Pb Free Product http //www.ncepower.com NCE8295A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)
Otros transistores... NCE75H21D, NCE75H21T, NCE75H25, NCE75H25T, NCE75H35TC, NCE8290, NCE8290B, NCE8295AG, 2SK3878, NCE82H140, NCE82H140LL, NCE82H160, NCE82H160D, NCE85H21TC, NCE85H25, NCE85H25T, NCE8736
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