NCE8295AI Specs and Replacement

Type Designator: NCE8295AI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 268 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-251

NCE8295AI substitution

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NCE8295AI datasheet

 ..1. Size:687K  ncepower
nce8295ai.pdf pdf_icon

NCE8295AI

Pb Free Product http //www.ncepower.com NCE8295AI NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AI uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =82V,I =95A DS D R ... See More ⇒

 6.1. Size:612K  ncepower
nce8295ag.pdf pdf_icon

NCE8295AI

http //www.ncepower.com NCE8295AG NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE8295AG uses advanced trench technology and design V =82V,I =95A DS D to provide excellent R with low gate charge. This device is R ... See More ⇒

 6.2. Size:419K  ncepower
nce8295ak.pdf pdf_icon

NCE8295AI

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 6.3. Size:351K  ncepower
nce8295a.pdf pdf_icon

NCE8295AI

Pb Free Product http //www.ncepower.com NCE8295A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: NCE75H21D, NCE75H21T, NCE75H25, NCE75H25T, NCE75H35TC, NCE8290, NCE8290B, NCE8295AG, 2SK3878, NCE82H140, NCE82H140LL, NCE82H160, NCE82H160D, NCE85H21TC, NCE85H25, NCE85H25T, NCE8736

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