All MOSFET. NCE8295AI Datasheet

 

NCE8295AI MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCE8295AI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 95 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 109.3 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 268 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-251

 NCE8295AI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCE8295AI Datasheet (PDF)

 ..1. Size:687K  ncepower
 nce8295ai.pdf

NCE8295AI NCE8295AI

Pb Free Producthttp://www.ncepower.comNCE8295AINCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE8295AI uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =82V,I =95ADS DR

 6.1. Size:612K  ncepower
 nce8295ag.pdf

NCE8295AI NCE8295AI

http://www.ncepower.comNCE8295AGNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE8295AG uses advanced trench technology and design V =82V,I =95ADS Dto provide excellent R with low gate charge. This device is R

 6.2. Size:419K  ncepower
 nce8295ak.pdf

NCE8295AI NCE8295AI

Pb Free Producthttp://www.ncepower.com NCE8295AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =95A RDS(ON)

 6.3. Size:351K  ncepower
 nce8295a.pdf

NCE8295AI NCE8295AI

Pb Free Producthttp://www.ncepower.com NCE8295ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)

 6.4. Size:393K  ncepower
 nce8295ad.pdf

NCE8295AI NCE8295AI

Pb Free Producthttp://www.ncepower.com NCE8295ADNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features Schematic diagram VDS =82V,ID =95A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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