Справочник MOSFET. NCE8295AI

 

NCE8295AI Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE8295AI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 82 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 95 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 268 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO-251
     - подбор MOSFET транзистора по параметрам

 

NCE8295AI Datasheet (PDF)

 ..1. Size:687K  ncepower
nce8295ai.pdfpdf_icon

NCE8295AI

Pb Free Producthttp://www.ncepower.comNCE8295AINCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE8295AI uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =82V,I =95ADS DR

 6.1. Size:612K  ncepower
nce8295ag.pdfpdf_icon

NCE8295AI

http://www.ncepower.comNCE8295AGNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE8295AG uses advanced trench technology and design V =82V,I =95ADS Dto provide excellent R with low gate charge. This device is R

 6.2. Size:419K  ncepower
nce8295ak.pdfpdf_icon

NCE8295AI

Pb Free Producthttp://www.ncepower.com NCE8295AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =95A RDS(ON)

 6.3. Size:351K  ncepower
nce8295a.pdfpdf_icon

NCE8295AI

Pb Free Producthttp://www.ncepower.com NCE8295ANCE N-Channel Enhancement Mode Power MOSFET Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =95A Schematic diagram RDS(ON)

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History: UF640L-T2Q-T | GSM8206 | IPD50R280CE | PHP6N50E | KTX598TF | NDT6N70 | 2SK3443

 

 
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