NCEA02P20K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEA02P20K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 82 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de NCEA02P20K MOSFET
NCEA02P20K Datasheet (PDF)
ncea02p20k.pdf

http://www.ncepower.comNCEA02P20KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA02P20K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General FeaturesSchematic diagram V =-200V,I =-20ADS DR
ncea01p13k.pdf

NCEA01P13Khttp://www.ncepower.comNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA01P13K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General FeaturesSchematic diagram V =-100V,I =-13ADS DR
ncea0130ag.pdf

http://www.ncepower.comNCEA0130AGNCE Automotive N-Channel Enhancement Mode Power MOSFET (Primary)General Features V = 100V,I =36ADescription DS DThe NCEA0130AG uses advanced trench technology and R
Otros transistores... NCE82H160D , NCE85H21TC , NCE85H25 , NCE85H25T , NCE8736 , NCE9435A , NCEA0130AG , NCEA01P13K , IRFB3607 , NCEA15P30K , NCEA2301 , NCEA4080K , NCEA40P25G , NCEA6042AG , NCEA6050KA , NCEA6058K , NCEA6080K .
History: AP9412GJ | VBFB165R07S | VBM165R10 | BUZ73LH | IRFU3910P | PMR670UPE | 2SJ529S
History: AP9412GJ | VBFB165R07S | VBM165R10 | BUZ73LH | IRFU3910P | PMR670UPE | 2SJ529S



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