NCEA02P20K Datasheet and Replacement
Type Designator: NCEA02P20K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 82 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: TO252
NCEA02P20K substitution
NCEA02P20K Datasheet (PDF)
ncea02p20k.pdf

http://www.ncepower.comNCEA02P20KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA02P20K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General FeaturesSchematic diagram V =-200V,I =-20ADS DR
ncea01p13k.pdf

NCEA01P13Khttp://www.ncepower.comNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA01P13K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General FeaturesSchematic diagram V =-100V,I =-13ADS DR
ncea0130ag.pdf

http://www.ncepower.comNCEA0130AGNCE Automotive N-Channel Enhancement Mode Power MOSFET (Primary)General Features V = 100V,I =36ADescription DS DThe NCEA0130AG uses advanced trench technology and R
Datasheet: NCE82H160D , NCE85H21TC , NCE85H25 , NCE85H25T , NCE8736 , NCE9435A , NCEA0130AG , NCEA01P13K , IRFB3607 , NCEA15P30K , NCEA2301 , NCEA4080K , NCEA40P25G , NCEA6042AG , NCEA6050KA , NCEA6058K , NCEA6080K .
History: FDFS6N548 | APT47N60BCFG | RJK6002DPE | SSM3K335R | CS50N06P | AP03N70P-A | NCV8408
Keywords - NCEA02P20K MOSFET datasheet
NCEA02P20K cross reference
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History: FDFS6N548 | APT47N60BCFG | RJK6002DPE | SSM3K335R | CS50N06P | AP03N70P-A | NCV8408



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