NCEA02P20K Specs and Replacement

Type Designator: NCEA02P20K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm

Package: TO252

NCEA02P20K substitution

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NCEA02P20K datasheet

 ..1. Size:742K  ncepower
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NCEA02P20K

http //www.ncepower.com NCEA02P20K NCE P-Channel Enhancement Mode Power MOSFET Description The NCEA02P20K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. General Features Schematic diagram V =-200V,I =-20A DS D R ... See More ⇒

 9.1. Size:962K  ncepower
ncea01p13k.pdf pdf_icon

NCEA02P20K

NCEA01P13K http //www.ncepower.com NCE Automotive P-Channel Enhancement Mode Power MOSFET Description The NCEA01P13K uses advanced trench technology and design to provide excellent R with low gate charge. It can DS(ON) be used in a wide variety of applications. It is ESD protested. General Features Schematic diagram V =-100V,I =-13A DS D R ... See More ⇒

 9.2. Size:759K  ncepower
ncea0130ag.pdf pdf_icon

NCEA02P20K

http //www.ncepower.com NCEA0130AG NCE Automotive N-Channel Enhancement Mode Power MOSFET (Primary) General Features V = 100V,I =36A Description DS D The NCEA0130AG uses advanced trench technology and R ... See More ⇒

Detailed specifications: NCE82H160D, NCE85H21TC, NCE85H25, NCE85H25T, NCE8736, NCE9435A, NCEA0130AG, NCEA01P13K, K4145, NCEA15P30K, NCEA2301, NCEA4080K, NCEA40P25G, NCEA6042AG, NCEA6050KA, NCEA6058K, NCEA6080K

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