NCEA60ND08S Todos los transistores

 

NCEA60ND08S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEA60ND08S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 112 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET NCEA60ND08S

 

NCEA60ND08S Datasheet (PDF)

 ..1. Size:811K  ncepower
ncea60nd08s.pdf

NCEA60ND08S
NCEA60ND08S

NCEA60ND08Shttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I =8ADS DDescriptionR

 6.1. Size:724K  ncepower
ncea60nd18g.pdf

NCEA60ND08S
NCEA60ND08S

NCEA60ND18Ghttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =20ADS DDescriptionR

 8.1. Size:900K  ncepower
ncea6058k.pdf

NCEA60ND08S
NCEA60ND08S

http://www.ncepower.comNCEA6058KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =64ADS DR

 8.2. Size:1045K  ncepower
ncea6050ka.pdf

NCEA60ND08S
NCEA60ND08S

http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR

 8.3. Size:929K  ncepower
ncea6080k.pdf

NCEA60ND08S
NCEA60ND08S

http://www.ncepower.comNCEA6080KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6080K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.Schematic diagramGeneral Features V =60V,I =80ADS DR

 8.4. Size:837K  ncepower
ncea60p82ak.pdf

NCEA60ND08S
NCEA60ND08S

NCEA60P82AKhttp://www.ncepower.comNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA60P82AK uses advanced trench technology and designto provide excellent R with low gate charge .This device is wellDS(ON)suited for high current load applications.General FeaturesSchematic diagram V =-60V,I =-82ADS DR

 8.5. Size:623K  ncepower
ncea6042ag.pdf

NCEA60ND08S
NCEA60ND08S

http://www.ncepower.comNCEA6042AGNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =42ADS DDescriptionR

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


NCEA60ND08S
  NCEA60ND08S
  NCEA60ND08S
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top