NCEA60ND08S Datasheet and Replacement
Type Designator: NCEA60ND08S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 112 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP8
NCEA60ND08S substitution
NCEA60ND08S Datasheet (PDF)
ncea60nd08s.pdf

NCEA60ND08Shttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I =8ADS DDescriptionR
ncea60nd18g.pdf

NCEA60ND18Ghttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =20ADS DDescriptionR
ncea6058k.pdf

http://www.ncepower.comNCEA6058KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =64ADS DR
ncea6050ka.pdf

http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR
Datasheet: NCEA15P30K , NCEA2301 , NCEA4080K , NCEA40P25G , NCEA6042AG , NCEA6050KA , NCEA6058K , NCEA6080K , IRLB4132 , NCEA60ND18G , NCEA60P82AK , NCEA65NF036T , NCEA65NF036T4 , NCEA85H25 , NCEAP0135AK , NCEAP016N10LL , NCEAP016N60VD .
History: FDS6694 | AP4531GM | PHD18NQ10T | CJP02N60 | 12N80G-T3P-T | RU1HL13R | AP9U18GH
Keywords - NCEA60ND08S MOSFET datasheet
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History: FDS6694 | AP4531GM | PHD18NQ10T | CJP02N60 | 12N80G-T3P-T | RU1HL13R | AP9U18GH



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