All MOSFET. NCEA60ND08S Datasheet

 

NCEA60ND08S Datasheet and Replacement


   Type Designator: NCEA60ND08S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP8
 

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NCEA60ND08S Datasheet (PDF)

 ..1. Size:811K  ncepower
ncea60nd08s.pdf pdf_icon

NCEA60ND08S

NCEA60ND08Shttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I =8ADS DDescriptionR

 6.1. Size:724K  ncepower
ncea60nd18g.pdf pdf_icon

NCEA60ND08S

NCEA60ND18Ghttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =20ADS DDescriptionR

 8.1. Size:900K  ncepower
ncea6058k.pdf pdf_icon

NCEA60ND08S

http://www.ncepower.comNCEA6058KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =64ADS DR

 8.2. Size:1045K  ncepower
ncea6050ka.pdf pdf_icon

NCEA60ND08S

http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR

Datasheet: NCEA15P30K , NCEA2301 , NCEA4080K , NCEA40P25G , NCEA6042AG , NCEA6050KA , NCEA6058K , NCEA6080K , IRLB4132 , NCEA60ND18G , NCEA60P82AK , NCEA65NF036T , NCEA65NF036T4 , NCEA85H25 , NCEAP0135AK , NCEAP016N10LL , NCEAP016N60VD .

History: 1N65G-TF3-T | PHD18NQ10T | SSM3K7002F | LSB65R125HT | RT3K11M | H02N60SI | LN2324DT2AG

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