NCEA60ND08S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEA60ND08S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 38.2 nC
Время нарастания (tr): 5.5 ns
Выходная емкость (Cd): 112 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.028 Ohm
Тип корпуса: SOP8
Аналог (замена) для NCEA60ND08S
NCEA60ND08S Datasheet (PDF)
ncea60nd08s.pdf
NCEA60ND08Shttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I =8ADS DDescriptionR
ncea60nd18g.pdf
NCEA60ND18Ghttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =20ADS DDescriptionR
ncea6058k.pdf
http://www.ncepower.comNCEA6058KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =64ADS DR
ncea6050ka.pdf
http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR
ncea6080k.pdf
http://www.ncepower.comNCEA6080KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6080K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.Schematic diagramGeneral Features V =60V,I =80ADS DR
ncea60p82ak.pdf
NCEA60P82AKhttp://www.ncepower.comNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA60P82AK uses advanced trench technology and designto provide excellent R with low gate charge .This device is wellDS(ON)suited for high current load applications.General FeaturesSchematic diagram V =-60V,I =-82ADS DR
ncea6042ag.pdf
http://www.ncepower.comNCEA6042AGNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =42ADS DDescriptionR
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