NCEAP026N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP026N10T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 245 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28 nS
Cossⓘ - Capacitancia de salida: 1100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de NCEAP026N10T MOSFET
NCEAP026N10T Datasheet (PDF)
nceap026n10t.pdf

http://www.ncepower.com NCEAP026N10TNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP026N10T uses Super Trench II technology that is V =100V,I =245A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.15m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power
nceap020n10ll.pdf

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g
nceap020n85ll.pdf

NCEAP020N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =295ADS Duniquely optimized to provide the most efficient high frequencyR =1.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent ga
nceap023n10ll.pdf

NCEAP023N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =300ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM
Otros transistores... NCEAP018N60GU , NCEAP018N85LL , NCEAP01ND35AG , NCEAP01P35AK , NCEAP020N10LL , NCEAP020N85LL , NCEAP023N10LL , NCEAP025N60AG , IRFB31N20D , NCEAP028N85D , NCEAP030N85LL , NCEAP035N85GU , NCEAP15ND10AG , NCEAP15T14 , NCEAP15T14D , NCEAP16N85AK , NCEAP25N10AD .
History: UPA2592T1H | HMS29N65F | 2SJ326-Z | PSMN3R3-80BS | HGI098N10A | AUIRF1405 | 2SK4066-DL-1E
History: UPA2592T1H | HMS29N65F | 2SJ326-Z | PSMN3R3-80BS | HGI098N10A | AUIRF1405 | 2SK4066-DL-1E



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