NCEAP026N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEAP026N10T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 300 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 245 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 240 nC
   Tiempo de subida (tr): 28 nS
   Conductancia de drenaje-sustrato (Cd): 1100 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0026 Ohm
   Paquete / Cubierta: TO-247

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NCEAP026N10T Datasheet (PDF)

..1. Size:395K ncepower
nceap026n10t.pdf

http://www.ncepower.com NCEAP026N10TNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP026N10T uses Super Trench II technology that is V =100V,I =245A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.15m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power

7.1. Size:747K ncepower
nceap020n10ll.pdf

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g

7.2. Size:542K ncepower
nceap020n85ll.pdf

NCEAP020N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =295ADS Duniquely optimized to provide the most efficient high frequencyR =1.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent ga

7.3. Size:793K ncepower
nceap023n10ll.pdf

NCEAP023N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =300ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM

7.4. Size:967K ncepower
nceap020n60gu.pdf

http://www.ncepower.comNCEAP020N60GUNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230ADS Duniquely optimized to provide the most efficient high frequencyR =1.8 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate

7.5. Size:436K ncepower
nceap025n60ag.pdf

http://www.ncepower.com NCEAP025N60AGNCE Automotive N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEAP025N60AG uses Super Trench II technology that is V =60V,I =185A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.5m

7.6. Size:493K ncepower
nceap028n85d.pdf

NCEAP028N85Dhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP028N85D uses Super Trench II technology that is V =85V,I =220ADS Duniquely optimized to provide the most efficient high frequencyR =2.4m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate cha

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