NCEAP026N10T Specs and Replacement

Type Designator: NCEAP026N10T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 245 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TO-247

NCEAP026N10T substitution

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NCEAP026N10T datasheet

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NCEAP026N10T

http //www.ncepower.com NCEAP026N10T NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP026N10T uses Super Trench II technology that is V =100V,I =245A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.15m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power ... See More ⇒

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NCEAP026N10T

NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g... See More ⇒

 7.2. Size:542K  ncepower
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NCEAP026N10T

NCEAP020N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =295A DS D uniquely optimized to provide the most efficient high frequency R =1.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent ga... See More ⇒

 7.3. Size:793K  ncepower
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NCEAP026N10T

NCEAP023N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =300A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM... See More ⇒

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Detailed specifications: NCEAP018N60GU, NCEAP018N85LL, NCEAP01ND35AG, NCEAP01P35AK, NCEAP020N10LL, NCEAP020N85LL, NCEAP023N10LL, NCEAP025N60AG, IRF2807, NCEAP028N85D, NCEAP030N85LL, NCEAP035N85GU, NCEAP15ND10AG, NCEAP15T14, NCEAP15T14D, NCEAP16N85AK, NCEAP25N10AD

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.