Справочник MOSFET. NCEAP026N10T

 

NCEAP026N10T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEAP026N10T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 245 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для NCEAP026N10T

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEAP026N10T Datasheet (PDF)

 ..1. Size:395K  ncepower
 nceap026n10t.pdf pdf_icon

NCEAP026N10T

http://www.ncepower.com NCEAP026N10TNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP026N10T uses Super Trench II technology that is V =100V,I =245A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.15m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power

 7.1. Size:747K  ncepower
 nceap020n10ll.pdf pdf_icon

NCEAP026N10T

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g

 7.2. Size:542K  ncepower
 nceap020n85ll.pdf pdf_icon

NCEAP026N10T

NCEAP020N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =295ADS Duniquely optimized to provide the most efficient high frequencyR =1.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent ga

 7.3. Size:793K  ncepower
 nceap023n10ll.pdf pdf_icon

NCEAP026N10T

NCEAP023N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =300ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM

ПОКАЗАТЬ ЕЩЁ

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History: PHX27NQ11T | NCEAP40ND40AG | 2SK2129 | DMT3020LSD | STF20NK50Z | TSP7N80M | 2SK3899-ZK

 

 
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