NCEAP026N10T. Аналоги и основные параметры

Наименование производителя: NCEAP026N10T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 245 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 28 ns

Cossⓘ - Выходная емкость: 1100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm

Тип корпуса: TO-247

Аналог (замена) для NCEAP026N10T

- подборⓘ MOSFET транзистора по параметрам

 

NCEAP026N10T даташит

 ..1. Size:395K  ncepower
 nceap026n10t.pdf pdf_icon

NCEAP026N10T

http //www.ncepower.com NCEAP026N10T NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP026N10T uses Super Trench II technology that is V =100V,I =245A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.15m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power

 7.1. Size:747K  ncepower
 nceap020n10ll.pdf pdf_icon

NCEAP026N10T

NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g

 7.2. Size:542K  ncepower
 nceap020n85ll.pdf pdf_icon

NCEAP026N10T

NCEAP020N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =295A DS D uniquely optimized to provide the most efficient high frequency R =1.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent ga

 7.3. Size:793K  ncepower
 nceap023n10ll.pdf pdf_icon

NCEAP026N10T

NCEAP023N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =300A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCEAP018N60GU, NCEAP018N85LL, NCEAP01ND35AG, NCEAP01P35AK, NCEAP020N10LL, NCEAP020N85LL, NCEAP023N10LL, NCEAP025N60AG, IRF2807, NCEAP028N85D, NCEAP030N85LL, NCEAP035N85GU, NCEAP15ND10AG, NCEAP15T14, NCEAP15T14D, NCEAP16N85AK, NCEAP25N10AD