Справочник MOSFET. NCEAP026N10T

 

NCEAP026N10T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEAP026N10T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 245 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для NCEAP026N10T

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEAP026N10T Datasheet (PDF)

 ..1. Size:395K  ncepower
 nceap026n10t.pdf pdf_icon

NCEAP026N10T

http://www.ncepower.com NCEAP026N10TNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEAP026N10T uses Super Trench II technology that is V =100V,I =245A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.15m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power

 7.1. Size:747K  ncepower
 nceap020n10ll.pdf pdf_icon

NCEAP026N10T

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g

 7.2. Size:542K  ncepower
 nceap020n85ll.pdf pdf_icon

NCEAP026N10T

NCEAP020N85LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =295ADS Duniquely optimized to provide the most efficient high frequencyR =1.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent ga

 7.3. Size:793K  ncepower
 nceap023n10ll.pdf pdf_icon

NCEAP026N10T

NCEAP023N10LLNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =300ADS Duniquely optimized to provide the most efficient high frequencyR =1.7m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEAP018N60GU , NCEAP018N85LL , NCEAP01ND35AG , NCEAP01P35AK , NCEAP020N10LL , NCEAP020N85LL , NCEAP023N10LL , NCEAP025N60AG , IRFB31N20D , NCEAP028N85D , NCEAP030N85LL , NCEAP035N85GU , NCEAP15ND10AG , NCEAP15T14 , NCEAP15T14D , NCEAP16N85AK , NCEAP25N10AD .

History: VS3625GPMC | MDV1595SURH | VBA3695 | FQN1N50CTA | CP650 | AM8N25-550D | AM2373P

 

 
Back to Top

 


 
.