NCEAP16N85AK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEAP16N85AK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 138 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: TO-252

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NCEAP16N85AK datasheet

 ..1. Size:641K  ncepower
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NCEAP16N85AK

http //www.ncepower.com NCEAP16N85AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP16N85AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw

 8.1. Size:402K  ncepower
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NCEAP16N85AK

http //www.ncepower.com NCEAP15T14 NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R

 8.2. Size:695K  ncepower
nceap15t14d.pdf pdf_icon

NCEAP16N85AK

http //www.ncepower.com NCEAP15T14D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x

 8.3. Size:724K  ncepower
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NCEAP16N85AK

http //www.ncepower.com NCEAP15ND10AG NCE N-Channel Super Trench II Power MOSFET (Primary) Description General Features The NCEAP15ND10AG uses Super Trench II technology that V =100V,I =46A DS D is uniquely optimized to provide the most efficient high R =13.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =16.5m (typical) @ V =4.5V DS(ON

Otros transistores... NCEAP025N60AG, NCEAP026N10T, NCEAP028N85D, NCEAP030N85LL, NCEAP035N85GU, NCEAP15ND10AG, NCEAP15T14, NCEAP15T14D, AO3400A, NCEAP25N10AD, NCEAP25N10AG, NCEAP25N10AK, NCEAP30T17GU, NCEAP4040Q, NCEAP4045AGU, NCEAP4045GU, NCEAP4065QU