NCEAP16N85AK. Аналоги и основные параметры

Наименование производителя: NCEAP16N85AK

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 138 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 250 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm

Тип корпуса: TO-252

Аналог (замена) для NCEAP16N85AK

- подборⓘ MOSFET транзистора по параметрам

 

NCEAP16N85AK даташит

 ..1. Size:641K  ncepower
 nceap16n85ak.pdf pdf_icon

NCEAP16N85AK

http //www.ncepower.com NCEAP16N85AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP16N85AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw

 8.1. Size:402K  ncepower
 nceap15t14.pdf pdf_icon

NCEAP16N85AK

http //www.ncepower.com NCEAP15T14 NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R

 8.2. Size:695K  ncepower
 nceap15t14d.pdf pdf_icon

NCEAP16N85AK

http //www.ncepower.com NCEAP15T14D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x

 8.3. Size:724K  ncepower
 nceap15nd10ag.pdf pdf_icon

NCEAP16N85AK

http //www.ncepower.com NCEAP15ND10AG NCE N-Channel Super Trench II Power MOSFET (Primary) Description General Features The NCEAP15ND10AG uses Super Trench II technology that V =100V,I =46A DS D is uniquely optimized to provide the most efficient high R =13.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =16.5m (typical) @ V =4.5V DS(ON

ПОКАЗАТЬ ЕЩЁ

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