All MOSFET. NCEAP16N85AK Datasheet

 

NCEAP16N85AK Datasheet and Replacement


   Type Designator: NCEAP16N85AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 138 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO-252
 

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NCEAP16N85AK Datasheet (PDF)

 ..1. Size:641K  ncepower
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NCEAP16N85AK

http://www.ncepower.comNCEAP16N85AKNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP16N85AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency sw

 8.1. Size:402K  ncepower
 nceap15t14.pdf pdf_icon

NCEAP16N85AK

http://www.ncepower.com NCEAP15T14NCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =150V,I =140ADS Duniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R

 8.2. Size:695K  ncepower
 nceap15t14d.pdf pdf_icon

NCEAP16N85AK

http://www.ncepower.com NCEAP15T14DNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =150V,I =140ADS Duniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x

 8.3. Size:724K  ncepower
 nceap15nd10ag.pdf pdf_icon

NCEAP16N85AK

http://www.ncepower.com NCEAP15ND10AGNCE N-Channel Super Trench II Power MOSFET (Primary)DescriptionGeneral FeaturesThe NCEAP15ND10AG uses Super Trench II technology that V =100V,I =46ADS Dis uniquely optimized to provide the most efficient highR =13.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =16.5m (typical) @ V =4.5VDS(ON

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Datasheet: NCEAP025N60AG , NCEAP026N10T , NCEAP028N85D , NCEAP030N85LL , NCEAP035N85GU , NCEAP15ND10AG , NCEAP15T14 , NCEAP15T14D , RU6888R , NCEAP25N10AD , NCEAP25N10AG , NCEAP25N10AK , NCEAP30T17GU , NCEAP4040Q , NCEAP4045AGU , NCEAP4045GU , NCEAP4065QU .

History: SI4622DY | VBZL80N03

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