NCEAP16N85AK
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEAP16N85AK
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 138
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 65
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 31
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package:
TO-252
NCEAP16N85AK
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEAP16N85AK
Datasheet (PDF)
..1. Size:641K ncepower
nceap16n85ak.pdf
http://www.ncepower.comNCEAP16N85AKNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP16N85AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency sw
8.1. Size:402K ncepower
nceap15t14.pdf
http://www.ncepower.com NCEAP15T14NCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =150V,I =140ADS Duniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R
8.2. Size:695K ncepower
nceap15t14d.pdf
http://www.ncepower.com NCEAP15T14DNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =150V,I =140ADS Duniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x
8.3. Size:724K ncepower
nceap15nd10ag.pdf
http://www.ncepower.com NCEAP15ND10AGNCE N-Channel Super Trench II Power MOSFET (Primary)DescriptionGeneral FeaturesThe NCEAP15ND10AG uses Super Trench II technology that V =100V,I =46ADS Dis uniquely optimized to provide the most efficient highR =13.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =16.5m (typical) @ V =4.5VDS(ON
Datasheet: WPB4002
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