NCEAP6050AQU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP6050AQU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 71 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 68 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 VQgⓘ - Carga de la puerta: 34.8 nC
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 356 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm
Paquete / Cubierta: DFN3X3
Búsqueda de reemplazo de MOSFET NCEAP6050AQU
NCEAP6050AQU Datasheet (PDF)
nceap6050aqu.pdf
http://www.ncepower.comNCEAP6050AQUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP6050AQU uses Super Trench technology that is V =60V,I =68ADS Duniquely optimized to provide the most efficient high frequencyR =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power lossesR =7.7m (typical) @
nceap6055agu.pdf
http://www.ncepower.comNCEAP6055AGUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6055AGU uses Super Trench technology that is V =60V,I =70ADS Duniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5VDS
nceap60t15g.pdf
http://www.ncepower.com NCEAP60T15GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R
nceap60t20d.pdf
http://www.ncepower.com NCEAP60T20DNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250ADS Doptimized to provide the most efficient high frequency switchingR =1.8m (typical) @ V =10VDS(ON) GSperformance. Both conduction and switching power losses are Excellent gate c
nceap60nd30ag.pdf
http://www.ncepower.comNCEAP60ND30AGNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =15m (typical) @ V =4.5VDS
nceap60p90ak.pdf
NCEAP60P90AKhttp://www.ncepower.comNCE Automotive P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-60V,I =-90ADS DThe NCEAP60P90AK uses Super Trench technology that isR =7.6m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =9.2m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and
nceap60t12ak.pdf
NCEAP60T12AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AK uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R
nceap6035ag.pdf
http://www.ncepower.com NCEAP6035AGNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6035AG uses Super Trench technology that is V =60V,I =48ADS Duniquely optimized to provide the most efficient high frequency R =9.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =12.5m (typical) @ V =4.5VDS(O
nceap60nd60g.pdf
NCEAP60ND60Ghttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60ND60G uses Super Trench technology that is V =60V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R
nceap60t12ad.pdf
NCEAP60T12ADhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AD uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R
nceap6090agu.pdf
NCEAP6090AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6090AGU uses Super Trench technology that is V =60V,I =130ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.5m (typical) @ V =
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD