All MOSFET. NCEAP6050AQU Datasheet

 

NCEAP6050AQU MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEAP6050AQU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 68 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 34.8 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 356 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: DFN3X3

 NCEAP6050AQU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEAP6050AQU Datasheet (PDF)

 ..1. Size:698K  ncepower
 nceap6050aqu.pdf

NCEAP6050AQU NCEAP6050AQU

http://www.ncepower.comNCEAP6050AQUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP6050AQU uses Super Trench technology that is V =60V,I =68ADS Duniquely optimized to provide the most efficient high frequencyR =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power lossesR =7.7m (typical) @

 6.1. Size:759K  ncepower
 nceap6055agu.pdf

NCEAP6050AQU NCEAP6050AQU

http://www.ncepower.comNCEAP6055AGUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6055AGU uses Super Trench technology that is V =60V,I =70ADS Duniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5VDS

 7.1. Size:713K  ncepower
 nceap60t15g.pdf

NCEAP6050AQU NCEAP6050AQU

http://www.ncepower.com NCEAP60T15GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R

 7.2. Size:723K  ncepower
 nceap60t20d.pdf

NCEAP6050AQU NCEAP6050AQU

http://www.ncepower.com NCEAP60T20DNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250ADS Doptimized to provide the most efficient high frequency switchingR =1.8m (typical) @ V =10VDS(ON) GSperformance. Both conduction and switching power losses are Excellent gate c

 7.3. Size:389K  ncepower
 nceap60nd30ag.pdf

NCEAP6050AQU NCEAP6050AQU

http://www.ncepower.comNCEAP60ND30AGNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40ADS Duniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =15m (typical) @ V =4.5VDS

 7.4. Size:623K  ncepower
 nceap60p90ak.pdf

NCEAP6050AQU NCEAP6050AQU

NCEAP60P90AKhttp://www.ncepower.comNCE Automotive P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-60V,I =-90ADS DThe NCEAP60P90AK uses Super Trench technology that isR =7.6m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =9.2m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and

 7.5. Size:754K  ncepower
 nceap60t12ak.pdf

NCEAP6050AQU NCEAP6050AQU

NCEAP60T12AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AK uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R

 7.6. Size:740K  ncepower
 nceap6035ag.pdf

NCEAP6050AQU NCEAP6050AQU

http://www.ncepower.com NCEAP6035AGNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6035AG uses Super Trench technology that is V =60V,I =48ADS Duniquely optimized to provide the most efficient high frequency R =9.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =12.5m (typical) @ V =4.5VDS(O

 7.7. Size:644K  ncepower
 nceap60nd60g.pdf

NCEAP6050AQU NCEAP6050AQU

NCEAP60ND60Ghttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP60ND60G uses Super Trench technology that is V =60V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R

 7.8. Size:675K  ncepower
 nceap60t12ad.pdf

NCEAP6050AQU NCEAP6050AQU

NCEAP60T12ADhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP60T12AD uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =150ADS Dswitching performance. Both conduction and switching power R

 7.9. Size:395K  ncepower
 nceap6090agu.pdf

NCEAP6050AQU NCEAP6050AQU

NCEAP6090AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP6090AGU uses Super Trench technology that is V =60V,I =130ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.5m (typical) @ V =

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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