NCEAP6050AQU MOSFET Datasheet: N-Ch, 60V, 68A. Full specification with pinout and replacement list

NCEAP6050AQU Specs and Replacement

Type Designator: NCEAP6050AQU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V

Qg ⓘ - Total Gate Charge: 34.8 nC

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 356 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm

Package: DFN3X3

NCEAP6050AQU substitution

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NCEAP6050AQU datasheet

..1. Size:698K ncepower
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http //www.ncepower.com NCEAP6050AQU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6050AQU uses Super Trench technology that is V =60V,I =68A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses R =7.7m (typical) @ ... See More ⇒

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nceap6055agu.pdf pdf_icon

http //www.ncepower.com NCEAP6055AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6055AGU uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS... See More ⇒

7.1. Size:713K ncepower
nceap60t15g.pdf pdf_icon

http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R ... See More ⇒

7.2. Size:723K ncepower
nceap60t20d.pdf pdf_icon

http //www.ncepower.com NCEAP60T20D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250A DS D optimized to provide the most efficient high frequency switching R =1.8m (typical) @ V =10V DS(ON) GS performance. Both conduction and switching power losses are Excellent gate c... See More ⇒