NCEAP6050AQU. Аналоги и основные параметры

Наименование производителя: NCEAP6050AQU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 71 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 68 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 30 ns

Cossⓘ - Выходная емкость: 356 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0088 Ohm

Тип корпуса: DFN3X3

Аналог (замена) для NCEAP6050AQU

- подборⓘ MOSFET транзистора по параметрам

 

NCEAP6050AQU даташит

 ..1. Size:698K  ncepower
 nceap6050aqu.pdf pdf_icon

NCEAP6050AQU

http //www.ncepower.com NCEAP6050AQU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6050AQU uses Super Trench technology that is V =60V,I =68A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses R =7.7m (typical) @

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 nceap6055agu.pdf pdf_icon

NCEAP6050AQU

http //www.ncepower.com NCEAP6055AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6055AGU uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS

 7.1. Size:713K  ncepower
 nceap60t15g.pdf pdf_icon

NCEAP6050AQU

http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R

 7.2. Size:723K  ncepower
 nceap60t20d.pdf pdf_icon

NCEAP6050AQU

http //www.ncepower.com NCEAP60T20D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250A DS D optimized to provide the most efficient high frequency switching R =1.8m (typical) @ V =10V DS(ON) GS performance. Both conduction and switching power losses are Excellent gate c

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