NCEP008N30GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEP008N30GU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 395 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 102 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 2400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00135 Ohm
   Paquete / Cubierta: PDFN5X6-8L

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NCEP008N30GU Datasheet (PDF)

..1. Size:692K ncepower
ncep008n30gu.pdf

http://www.ncepower.com NCEP008N30GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP008N30GU uses Super Trench II technology thatV =30V,I =395ADS Dis uniquely optimized to provide the most efficient high R =0.55m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5VDS(ON) GSswitching

6.1. Size:644K ncepower
ncep008nh40agu.pdf

http://www.ncepower.com NCEP008NH40AGUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40AGU uses Super Trench III technologyV =40V,I =353ADS Dthat is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to an

6.2. Size:685K ncepower
ncep008nh40asl.pdf

NCEP008NH40ASLhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP008NH40ASL uses Super Trench III technologyV =40V,I =397ADS Dthat is uniquely optimized to provide the most efficient highR =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to

6.3. Size:662K ncepower
ncep008nh40gu.pdf

http://www.ncepower.comNCEP008NH40GUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40GU uses Super Trench III technologyV =40V,I =375ADS Dthat is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5VDS(ON) GSswitch

6.4. Size:650K ncepower
ncep008nh40sl.pdf

http://www.ncepower.comNCEP008NH40SLNCE Automotive N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP008NH40SL uses Super Trench III technology V =40V,I =420ADS Dthat is uniquely optimized to provide the most efficient highR =0.6m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =0.95m (typical) @ V =4.5VDS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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