NCEP008N30GU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP008N30GU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 395 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 2400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00135 Ohm

Encapsulados: PDFN5X6-8L

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NCEP008N30GU datasheet

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NCEP008N30GU

http //www.ncepower.com NCEP008N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP008N30GU uses Super Trench II technology that V =30V,I =395A DS D is uniquely optimized to provide the most efficient high R =0.55m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5V DS(ON) GS switching

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NCEP008N30GU

http //www.ncepower.com NCEP008NH40AGU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40AGU uses Super Trench III technology V =40V,I =353A DS D that is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and switching power losses are minimized due to an

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NCEP008N30GU

NCEP008NH40ASL http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40ASL uses Super Trench III technology V =40V,I =397A DS D that is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and switching power losses are minimized due to

 6.3. Size:662K  ncepower
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NCEP008N30GU

http //www.ncepower.com NCEP008NH40GU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40GU uses Super Trench III technology V =40V,I =375A DS D that is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5V DS(ON) GS switch

MOSTRAR MÁS

Otros transistores... NCEAP60ND30AG, NCEAP60ND60G, NCEAP60T12AD, NCEAP60T12AK, NCEAP60T15G, NCEAP60T20D, NCEB301G, NCEB301Q, IRF9540, NCEP008NH40AGU, NCEP008NH40GU, NCEP0107AR, NCEP0107R, NCEP0109AR, NCEP0116AS, NCEP011N25QU, NCEP011NH25QU