NCEP008N30GU. Аналоги и основные параметры

Наименование производителя: NCEP008N30GU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 200 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 395 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 40 ns

Cossⓘ - Выходная емкость: 2400 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.00135 Ohm

Тип корпуса: PDFN5X6-8L

Аналог (замена) для NCEP008N30GU

- подборⓘ MOSFET транзистора по параметрам

 

NCEP008N30GU даташит

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NCEP008N30GU

http //www.ncepower.com NCEP008N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP008N30GU uses Super Trench II technology that V =30V,I =395A DS D is uniquely optimized to provide the most efficient high R =0.55m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5V DS(ON) GS switching

 6.1. Size:644K  ncepower
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NCEP008N30GU

http //www.ncepower.com NCEP008NH40AGU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40AGU uses Super Trench III technology V =40V,I =353A DS D that is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and switching power losses are minimized due to an

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NCEP008N30GU

NCEP008NH40ASL http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40ASL uses Super Trench III technology V =40V,I =397A DS D that is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and switching power losses are minimized due to

 6.3. Size:662K  ncepower
ncep008nh40gu.pdfpdf_icon

NCEP008N30GU

http //www.ncepower.com NCEP008NH40GU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40GU uses Super Trench III technology V =40V,I =375A DS D that is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5V DS(ON) GS switch

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