NCEP008N30GU - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP008N30GU
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 395 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 2400 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.00135 Ohm
Тип корпуса: PDFN5X6-8L
Аналог (замена) для NCEP008N30GU
NCEP008N30GU Datasheet (PDF)
ncep008n30gu.pdf

http://www.ncepower.com NCEP008N30GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP008N30GU uses Super Trench II technology thatV =30V,I =395ADS Dis uniquely optimized to provide the most efficient high R =0.55m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5VDS(ON) GSswitching
ncep008nh40agu.pdf

http://www.ncepower.com NCEP008NH40AGUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40AGU uses Super Trench III technologyV =40V,I =353ADS Dthat is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to an
ncep008nh40asl.pdf

NCEP008NH40ASLhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP008NH40ASL uses Super Trench III technologyV =40V,I =397ADS Dthat is uniquely optimized to provide the most efficient highR =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to
ncep008nh40gu.pdf

http://www.ncepower.comNCEP008NH40GUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40GU uses Super Trench III technologyV =40V,I =375ADS Dthat is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5VDS(ON) GSswitch
Другие MOSFET... NCEAP60ND30AG , NCEAP60ND60G , NCEAP60T12AD , NCEAP60T12AK , NCEAP60T15G , NCEAP60T20D , NCEB301G , NCEB301Q , K3569 , NCEP008NH40AGU , NCEP008NH40GU , NCEP0107AR , NCEP0107R , NCEP0109AR , NCEP0116AS , NCEP011N25QU , NCEP011NH25QU .



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