NCEP008N30GU. Аналоги и основные параметры
Наименование производителя: NCEP008N30GU
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 395 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 2400 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.00135 Ohm
Тип корпуса: PDFN5X6-8L
Аналог (замена) для NCEP008N30GU
- подборⓘ MOSFET транзистора по параметрам
NCEP008N30GU даташит
ncep008n30gu.pdf
http //www.ncepower.com NCEP008N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP008N30GU uses Super Trench II technology that V =30V,I =395A DS D is uniquely optimized to provide the most efficient high R =0.55m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5V DS(ON) GS switching
ncep008nh40agu.pdf
http //www.ncepower.com NCEP008NH40AGU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40AGU uses Super Trench III technology V =40V,I =353A DS D that is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and switching power losses are minimized due to an
ncep008nh40asl.pdf
NCEP008NH40ASL http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40ASL uses Super Trench III technology V =40V,I =397A DS D that is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and switching power losses are minimized due to
ncep008nh40gu.pdf
http //www.ncepower.com NCEP008NH40GU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40GU uses Super Trench III technology V =40V,I =375A DS D that is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5V DS(ON) GS switch
Другие IGBT... NCEAP60ND30AG, NCEAP60ND60G, NCEAP60T12AD, NCEAP60T12AK, NCEAP60T15G, NCEAP60T20D, NCEB301G, NCEB301Q, IRF9540, NCEP008NH40AGU, NCEP008NH40GU, NCEP0107AR, NCEP0107R, NCEP0109AR, NCEP0116AS, NCEP011N25QU, NCEP011NH25QU
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Список транзисторов
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