NCEP008N30GU Datasheet and Replacement

http://www.ncepower.com NCEP008N30GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP008N30GU uses Super Trench II technology thatV =30V,I =395ADS Dis uniquely optimized to provide the most efficient high R =0.55m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5VDS(ON) GSswitching

http://www.ncepower.com NCEP008NH40AGUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40AGU uses Super Trench III technologyV =40V,I =353ADS Dthat is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to an

NCEP008NH40ASLhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP008NH40ASL uses Super Trench III technologyV =40V,I =397ADS Dthat is uniquely optimized to provide the most efficient highR =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to

http://www.ncepower.comNCEP008NH40GUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40GU uses Super Trench III technologyV =40V,I =375ADS Dthat is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5VDS(ON) GSswitch

http://www.ncepower.comNCEP008NH40SLNCE Automotive N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP008NH40SL uses Super Trench III technology V =40V,I =420ADS Dthat is uniquely optimized to provide the most efficient highR =0.6m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =0.95m (typical) @ V =4.5VDS