NCEP015N30GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP015N30GU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 95 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 170 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.5 nS
Cossⓘ - Capacitancia de salida: 1407.8 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
Paquete / Cubierta: DFN5X6-8L
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NCEP015N30GU Datasheet (PDF)
ncep015n30gu.pdf

http://www.ncepower.com NCEP015N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @
ncep015n60ll.pdf

NCEP015N60LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =340ADS Dswitching performance. Both conduction and switching power R =1.0m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
ncep015nh30aqu.pdf

NCEP015NH30AQUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AQU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =174ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a
ncep015nh30agu.pdf

NCEP015NH30AGUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AGU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =180ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a
Otros transistores... NCEP0109AR , NCEP0116AS , NCEP011N25QU , NCEP011NH25QU , NCEP012N85LL , NCEP0135AF , NCEP0140AL , NCEP0155AG , IRF9540N , NCEP015N60LL , NCEP0160 , NCEP0160AG , NCEP0160G , NCEP016N10LL , NCEP016N60VD , NCEP016N85LL , NCEP0178 .
History: AONS66617 | GSM1913 | BUK7K12-60E | AP9930GM-HF | FQT7N10TF | 2SK3302 | AP9465GEM
History: AONS66617 | GSM1913 | BUK7K12-60E | AP9930GM-HF | FQT7N10TF | 2SK3302 | AP9465GEM



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