NCEP015N30GU datasheet, аналоги, основные параметры
Наименование производителя: NCEP015N30GU
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 95 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 170 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7.5 ns
Cossⓘ - Выходная емкость: 1407.8 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
Тип корпуса: DFN5X6-8L
Аналог (замена) для NCEP015N30GU
- подборⓘ MOSFET транзистора по параметрам
NCEP015N30GU даташит
ncep015n30gu.pdf
http //www.ncepower.com NCEP015N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @
ncep015n60ll.pdf
NCEP015N60LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =340A DS D switching performance. Both conduction and switching power R =1.0m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati
ncep015nh30aqu.pdf
NCEP015NH30AQU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AQU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =174A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a
ncep015nh30agu.pdf
NCEP015NH30AGU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AGU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =180A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a
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