NCEP015N30GU
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP015N30GU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 95
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 170
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 46.1
nC
trⓘ - Rise Time: 7.5
nS
Cossⓘ -
Output Capacitance: 1407.8
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023
Ohm
Package:
DFN5X6-8L
NCEP015N30GU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP015N30GU
Datasheet (PDF)
..1. Size:347K ncepower
ncep015n30gu.pdf 
http://www.ncepower.com NCEP015N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @
6.1. Size:847K ncepower
ncep015n60ll.pdf
NCEP015N60LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =340ADS Dswitching performance. Both conduction and switching power R =1.0m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
6.2. Size:636K ncepower
ncep015nh30aqu.pdf
NCEP015NH30AQUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AQU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =174ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a
6.3. Size:829K ncepower
ncep015nh30agu.pdf
NCEP015NH30AGUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AGU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =180ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a
6.4. Size:762K ncepower
ncep015n85ll.pdf
NCEP015N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =370ADS Duniquely optimized to provide the most efficient high frequencyR =1.1m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM)DS(on)lo
6.5. Size:1032K ncepower
ncep015nh30gu.pdf
NCEP015NH30GUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP015NH30GU uses Super Trench III technologyV =30V,I =189ADS Dthat is uniquely optimized to provide the most efficient highR =1.25m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =1.7m (typical) @ V =4.5VDS(ON) GSswi
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