NCEP016N85LL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP016N85LL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 460 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 360 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 2450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm

Encapsulados: TOLL

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NCEP016N85LL datasheet

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NCEP016N85LL

Pb Free Product NCEP016N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =360A DS D switching performance. Both conduction and switching power R =1.2m , typical @ V =10V DS(ON) GS losses are minimized due to an extrem

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NCEP016N85LL

Pb Free Product NCEP016N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =385A DS D switching performance. Both conduction and switching power R =1.2m , typical@ V =10V DS(ON) GS losses are minimized due to an extrem

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NCEP016N85LL

NCEP016N60VD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =305A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

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NCEP016N85LL

http //www.ncepower.com NCEP0160AG NCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

MOSTRAR MÁS

Otros transistores... NCEP0155AG, NCEP015N30GU, NCEP015N60LL, NCEP0160, NCEP0160AG, NCEP0160G, NCEP016N10LL, NCEP016N60VD, IRFB3607, NCEP0178, NCEP0178AL, NCEP0178D, NCEP0178F, NCEP018N10LL, NCEP018N30GU, NCEP018N60, NCEP018N60AGU