NCEP016N85LL Specs and Replacement
Type Designator: NCEP016N85LL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 460 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 360 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 2450 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TOLL
NCEP016N85LL substitution
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NCEP016N85LL datasheet
ncep016n85ll.pdf
Pb Free Product NCEP016N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =360A DS D switching performance. Both conduction and switching power R =1.2m , typical @ V =10V DS(ON) GS losses are minimized due to an extrem... See More ⇒
ncep016n10ll.pdf
Pb Free Product NCEP016N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =385A DS D switching performance. Both conduction and switching power R =1.2m , typical@ V =10V DS(ON) GS losses are minimized due to an extrem... See More ⇒
ncep016n60vd.pdf
NCEP016N60VD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =305A DS D switching performance. Both conduction and switching power R =1.1m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati... See More ⇒
ncep0160ag.pdf
http //www.ncepower.com NCEP0160AG NCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
Detailed specifications: NCEP0155AG, NCEP015N30GU, NCEP015N60LL, NCEP0160, NCEP0160AG, NCEP0160G, NCEP016N10LL, NCEP016N60VD, IRFB3607, NCEP0178, NCEP0178AL, NCEP0178D, NCEP0178F, NCEP018N10LL, NCEP018N30GU, NCEP018N60, NCEP018N60AGU
Keywords - NCEP016N85LL MOSFET specs
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