NCEP016N85LL - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP016N85LL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 460 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 360 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 39 ns
Cossⓘ - Выходная емкость: 2450 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0016 Ohm
Тип корпуса: TOLL
Аналог (замена) для NCEP016N85LL
NCEP016N85LL Datasheet (PDF)
ncep016n85ll.pdf
Pb Free ProductNCEP016N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =360ADS Dswitching performance. Both conduction and switching power R =1.2m , typical @ V =10VDS(ON) GSlosses are minimized due to an extrem
ncep016n10ll.pdf
Pb Free ProductNCEP016N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =385ADS Dswitching performance. Both conduction and switching power R =1.2m , typical@ V =10VDS(ON) GSlosses are minimized due to an extrem
ncep016n60vd.pdf
NCEP016N60VDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =305ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
ncep0160ag.pdf
http://www.ncepower.com NCEP0160AGNCE N-Channel Super Trench Power MOSFET Description The NCEP0160AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
Другие MOSFET... NCEP0155AG , NCEP015N30GU , NCEP015N60LL , NCEP0160 , NCEP0160AG , NCEP0160G , NCEP016N10LL , NCEP016N60VD , IRFB3607 , NCEP0178 , NCEP0178AL , NCEP0178D , NCEP0178F , NCEP018N10LL , NCEP018N30GU , NCEP018N60 , NCEP018N60AGU .
History: SSF10N60F
History: SSF10N60F
Список транзисторов
Обновления
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