NCEP01P60G Todos los transistores

 

NCEP01P60G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP01P60G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 435 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm
   Paquete / Cubierta: DFN5X6-8L
     - Selección de transistores por parámetros

 

NCEP01P60G Datasheet (PDF)

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NCEP01P60G

Pb Free Producthttp://www.ncepower.com NCEP01P60GNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60G uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =22m (typical) @ V =-10VDS(ON) GSlosses are minimized due to

 5.1. Size:659K  ncepower
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NCEP01P60G

NCEP01P60AGhttp://www.ncepower.comNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =19.5m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremel

 7.1. Size:653K  ncepower
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NCEP01P60G

Pb Free Producthttp://www.ncepower.com NCEP01P35ANCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35A uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-

 7.2. Size:841K  ncepower
ncep01p35ag.pdf pdf_icon

NCEP01P60G

http://www.ncepower.com NCEP01P35AGNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-35ADS Dswitching performance. Both conduction and switching power R =37m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely l

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History: STWA12N120K5 | HITJ0203MP | SPP80P06PH | IRFPC42R | TPC8029 | SIHF9540S | SMK0270F

 

 
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