NCEP01P60G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCEP01P60G
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 140 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 55 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 18 ns
Cossⓘ - Выходная емкость: 435 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.029 Ohm
Тип корпуса: DFN5X6-8L
- подбор MOSFET транзистора по параметрам
NCEP01P60G Datasheet (PDF)
ncep01p60g.pdf

Pb Free Producthttp://www.ncepower.com NCEP01P60GNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60G uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =22m (typical) @ V =-10VDS(ON) GSlosses are minimized due to
ncep01p60ag.pdf

NCEP01P60AGhttp://www.ncepower.comNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P60AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-55ADS Dswitching performance. Both conduction and switching power R =19.5m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremel
ncep01p35a.pdf

Pb Free Producthttp://www.ncepower.com NCEP01P35ANCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35A uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-
ncep01p35ag.pdf

http://www.ncepower.com NCEP01P35AGNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP01P35AG uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-100V,I =-35ADS Dswitching performance. Both conduction and switching power R =37m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely l
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SQJ474EP | STP80NE03L-06
History: SQJ474EP | STP80NE03L-06



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