NCEP01P60G Datasheet. Specs and Replacement

Type Designator: NCEP01P60G

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 435 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm

Package: DFN5X6-8L

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NCEP01P60G datasheet

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NCEP01P60G

Pb Free Product http //www.ncepower.com NCEP01P60G NCE P-Channel Super Trench Power MOSFET Description The NCEP01P60G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-55A DS D switching performance. Both conduction and switching power R =22m (typical) @ V =-10V DS(ON) GS losses are minimized due to... See More ⇒

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NCEP01P60G

NCEP01P60AG http //www.ncepower.com NCE P-Channel Super Trench Power MOSFET Description The NCEP01P60AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-55A DS D switching performance. Both conduction and switching power R =19.5m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremel... See More ⇒

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NCEP01P60G

Pb Free Product http //www.ncepower.com NCEP01P35A NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-... See More ⇒

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NCEP01P60G

http //www.ncepower.com NCEP01P35AG NCE P-Channel Super Trench Power MOSFET Description The NCEP01P35AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =-100V,I =-35A DS D switching performance. Both conduction and switching power R =37m (typical) @ V =-10V DS(ON) GS losses are minimized due to an extremely l... See More ⇒

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Detailed specifications: NCEP018N60GU, NCEP0190G, NCEP019N10T, NCEP01P35A, NCEP01P35AG, NCEP01P35AK, NCEP01P40AGU, NCEP01P60AG, SI2302, NCEP01T10G, NCEP01T11D, NCEP01T12D, NCEP01T13B, NCEP01T13BD, NCEP01T13LL, NCEP01T18D, NCEP01T18VD

Keywords - NCEP01P60G MOSFET specs

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