FQB34N20 Todos los transistores

 

FQB34N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQB34N20
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 60 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: TO263 D2PAK

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FQB34N20 Datasheet (PDF)

 ..1. Size:1876K  fairchild semi
fqb34n20 fqi34n20.pdf

FQB34N20
FQB34N20

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia

 ..2. Size:797K  onsemi
fqb34n20.pdf

FQB34N20
FQB34N20

FQB34N20N-Channel QFET MOSFET200 V, 31 A, 75 mFeatures 31 A, 200 V, RDS(on) = 75 m (Max.) @ VGS = 10 V,DescriptionID = 15.5 AThis N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 60 nC)is produced using ON Semiconductors proprietary planar stripe and DMOS technology. This advanced Low Crss (Typ. 55 pF)MOSFET technology has been especially t

 0.1. Size:1051K  fairchild semi
fqb34n20l fqi34n20l.pdf

FQB34N20
FQB34N20

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been

 0.2. Size:1016K  fairchild semi
fqb34n20ltm.pdf

FQB34N20
FQB34N20

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been

 0.3. Size:1043K  fairchild semi
fqb34n20tm am002.pdf

FQB34N20
FQB34N20

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia

 0.4. Size:952K  onsemi
fqb34n20l.pdf

FQB34N20
FQB34N20

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FQB22P10TMF085 , FQB25N33TMF085 , FQB27P06 , FQB30N06L , FQB33N10 , SDD04N60 , FQB33N10L , SDD03N70 , IRF1404 , SDD03N50 , FQB34N20L , SDD03N04 , FQB34P10 , FQB34P10TMF085 , FQB44N10 , SDD02N70 , FQB47P06 .

 

 
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