FQB34N20 Todos los transistores

 

FQB34N20 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB34N20

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 31 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: TO263 D2PAK

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FQB34N20 datasheet

 ..1. Size:1876K  fairchild semi
fqb34n20 fqi34n20.pdf pdf_icon

FQB34N20

October 2008 QFET FQB34N20 / FQI34N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especia

 ..2. Size:797K  onsemi
fqb34n20.pdf pdf_icon

FQB34N20

FQB34N20 N-Channel QFET MOSFET 200 V, 31 A, 75 m Features 31 A, 200 V, RDS(on) = 75 m (Max.) @ VGS = 10 V, Description ID = 15.5 A This N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 60 nC) is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced Low Crss (Typ. 55 pF) MOSFET technology has been especially t

 0.1. Size:1051K  fairchild semi
fqb34n20l fqi34n20l.pdf pdf_icon

FQB34N20

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been

 0.2. Size:1016K  fairchild semi
fqb34n20ltm.pdf pdf_icon

FQB34N20

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been

Otros transistores... FQB22P10TMF085 , FQB25N33TMF085 , FQB27P06 , FQB30N06L , FQB33N10 , SDD04N60 , FQB33N10L , SDD03N70 , 50N06 , SDD03N50 , FQB34N20L , SDD03N04 , FQB34P10 , FQB34P10TMF085 , FQB44N10 , SDD02N70 , FQB47P06 .

History: FDS6675B | IRFU3704 | RU6035M3

 

 

 

 

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