FQB34N20 PDF and Equivalents Search

 

FQB34N20 Specs and Replacement

Type Designator: FQB34N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO263 D2PAK

FQB34N20 substitution

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FQB34N20 datasheet

 ..1. Size:1876K  fairchild semi
fqb34n20 fqi34n20.pdf pdf_icon

FQB34N20

October 2008 QFET FQB34N20 / FQI34N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especia... See More ⇒

 ..2. Size:797K  onsemi
fqb34n20.pdf pdf_icon

FQB34N20

FQB34N20 N-Channel QFET MOSFET 200 V, 31 A, 75 m Features 31 A, 200 V, RDS(on) = 75 m (Max.) @ VGS = 10 V, Description ID = 15.5 A This N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 60 nC) is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced Low Crss (Typ. 55 pF) MOSFET technology has been especially t... See More ⇒

 0.1. Size:1051K  fairchild semi
fqb34n20l fqi34n20l.pdf pdf_icon

FQB34N20

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been ... See More ⇒

 0.2. Size:1016K  fairchild semi
fqb34n20ltm.pdf pdf_icon

FQB34N20

October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been ... See More ⇒

Detailed specifications: FQB22P10TMF085, FQB25N33TMF085, FQB27P06, FQB30N06L, FQB33N10, SDD04N60, FQB33N10L, SDD03N70, 50N06, SDD03N50, FQB34N20L, SDD03N04, FQB34P10, FQB34P10TMF085, FQB44N10, SDD02N70, FQB47P06

Keywords - FQB34N20 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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