FQB34N20 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FQB34N20
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 180 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 60 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: TO263 D2PAK
- подбор MOSFET транзистора по параметрам
FQB34N20 Datasheet (PDF)
fqb34n20 fqi34n20.pdf

October 2008QFETFQB34N20 / FQI34N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC)planar stripe, DMOS technology. Low Crss ( typical 55 pF)This advanced technology has been especia
fqb34n20.pdf

FQB34N20N-Channel QFET MOSFET200 V, 31 A, 75 mFeatures 31 A, 200 V, RDS(on) = 75 m (Max.) @ VGS = 10 V,DescriptionID = 15.5 AThis N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 60 nC)is produced using ON Semiconductors proprietary planar stripe and DMOS technology. This advanced Low Crss (Typ. 55 pF)MOSFET technology has been especially t
fqb34n20l fqi34n20l.pdf

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been
fqb34n20ltm.pdf

October 2008QFETFQB34N20L / FQI34N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 52 pF)This advanced technology has been
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HY1808APM | STP90N4F3 | FQA7N90M
History: HY1808APM | STP90N4F3 | FQA7N90M



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