FQB34N20. Аналоги и основные параметры
Наименование производителя: FQB34N20
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 180 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 31 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Аналог (замена) для FQB34N20
- подборⓘ MOSFET транзистора по параметрам
FQB34N20 даташит
fqb34n20 fqi34n20.pdf
October 2008 QFET FQB34N20 / FQI34N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 55 pF) This advanced technology has been especia
fqb34n20.pdf
FQB34N20 N-Channel QFET MOSFET 200 V, 31 A, 75 m Features 31 A, 200 V, RDS(on) = 75 m (Max.) @ VGS = 10 V, Description ID = 15.5 A This N-Channel enhancement mode power MOSFET Low Gate Charge (Typ. 60 nC) is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced Low Crss (Typ. 55 pF) MOSFET technology has been especially t
fqb34n20l fqi34n20l.pdf
October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been
fqb34n20ltm.pdf
October 2008 QFET FQB34N20L / FQI34N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 31A, 200V, RDS(on) = 0.075 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 52 pF) This advanced technology has been
Другие MOSFET... FQB22P10TMF085 , FQB25N33TMF085 , FQB27P06 , FQB30N06L , FQB33N10 , SDD04N60 , FQB33N10L , SDD03N70 , 50N06 , SDD03N50 , FQB34N20L , SDD03N04 , FQB34P10 , FQB34P10TMF085 , FQB44N10 , SDD02N70 , FQB47P06 .
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Список транзисторов
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