NCEP020N85T Todos los transistores

 

NCEP020N85T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP020N85T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 365 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 320 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 2450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: TO-247
 

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NCEP020N85T Datasheet (PDF)

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NCEP020N85T

NCEP020N85TNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.6m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 4.1. Size:410K  ncepower
 ncep020n85d.pdf pdf_icon

NCEP020N85T

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.2. Size:795K  ncepower
 ncep020n85ll.pdf pdf_icon

NCEP020N85T

http://www.ncepower.com NCEP020N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =295ADS Dswitching performance. Both conduction and switching powerR =1.6m , typical @ V =10VDS(ON) GSlosses are minimized due to a

 4.3. Size:410K  ncepower
 ncep020n85.pdf pdf_icon

NCEP020N85T

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

MOSTRAR MÁS

Otros transistores... NCEP020N10LL , NCEP020N30BQU , NCEP020N30QU , NCEP020N60AGU , NCEP020N60GU , NCEP020N85 , NCEP020N85D , NCEP020N85LL , 60N06 , NCEP0210Q , NCEP0212F , NCEP0218G , NCEP0218K , NCEP0220F , NCEP0225F , NCEP0225G , NCEP0225K .

History: 2SK3673-01MR | STS6P3LLH6 | TPA65R260M

 

 
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