Справочник MOSFET. NCEP020N85T

 

NCEP020N85T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP020N85T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 365 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 320 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 245 nC
   tr ⓘ - Время нарастания: 39 ns
   Cossⓘ - Выходная емкость: 2450 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для NCEP020N85T

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP020N85T Datasheet (PDF)

 ..1. Size:399K  ncepower
 ncep020n85t.pdf pdf_icon

NCEP020N85T

NCEP020N85TNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.6m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 4.1. Size:410K  ncepower
 ncep020n85d.pdf pdf_icon

NCEP020N85T

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.2. Size:795K  ncepower
 ncep020n85ll.pdf pdf_icon

NCEP020N85T

http://www.ncepower.com NCEP020N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =295ADS Dswitching performance. Both conduction and switching powerR =1.6m , typical @ V =10VDS(ON) GSlosses are minimized due to a

 4.3. Size:410K  ncepower
 ncep020n85.pdf pdf_icon

NCEP020N85T

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP020N10LL , NCEP020N30BQU , NCEP020N30QU , NCEP020N60AGU , NCEP020N60GU , NCEP020N85 , NCEP020N85D , NCEP020N85LL , 60N06 , NCEP0210Q , NCEP0212F , NCEP0218G , NCEP0218K , NCEP0220F , NCEP0225F , NCEP0225G , NCEP0225K .

History: 2SK3822B

 

 
Back to Top

 


 
.