All MOSFET. NCEP020N85T Datasheet

 

NCEP020N85T Datasheet and Replacement


   Type Designator: NCEP020N85T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 365 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 320 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 2450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO-247
 

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NCEP020N85T Datasheet (PDF)

 ..1. Size:399K  ncepower
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NCEP020N85T

NCEP020N85TNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.6m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 4.1. Size:410K  ncepower
 ncep020n85d.pdf pdf_icon

NCEP020N85T

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 4.2. Size:795K  ncepower
 ncep020n85ll.pdf pdf_icon

NCEP020N85T

http://www.ncepower.com NCEP020N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =295ADS Dswitching performance. Both conduction and switching powerR =1.6m , typical @ V =10VDS(ON) GSlosses are minimized due to a

 4.3. Size:410K  ncepower
 ncep020n85.pdf pdf_icon

NCEP020N85T

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

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Datasheet: NCEP020N10LL , NCEP020N30BQU , NCEP020N30QU , NCEP020N60AGU , NCEP020N60GU , NCEP020N85 , NCEP020N85D , NCEP020N85LL , 60N06 , NCEP0210Q , NCEP0212F , NCEP0218G , NCEP0218K , NCEP0220F , NCEP0225F , NCEP0225G , NCEP0225K .

History: WMK08N65C4

Keywords - NCEP020N85T MOSFET datasheet

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