NCEP023N85M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP023N85M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 260 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 2100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm

Encapsulados: TO-220

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NCEP023N85M datasheet

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NCEP023N85M

NCEP023N85M, NCEP023N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ex

 4.1. Size:940K  ncepower
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NCEP023N85M

NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

 4.2. Size:940K  ncepower
 ncep023n85d.pdf pdf_icon

NCEP023N85M

NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr

 4.3. Size:412K  ncepower
 ncep023n85 ncep023n85d.pdf pdf_icon

NCEP023N85M

NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =260A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

MOSTRAR MÁS

Otros transistores... NCEP0218G, NCEP0218K, NCEP0220F, NCEP0225F, NCEP0225G, NCEP0225K, NCEP0230D, NCEP023N10T, IRFP064N, NCEP023N85T, NCEP023NH30GU, NCEP02503S, NCEP02505S, NCEP02515F, NCEP02525G, NCEP02525K, NCEP02580D