All MOSFET. NCEP023N85M Datasheet

 

NCEP023N85M Datasheet and Replacement


   Type Designator: NCEP023N85M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 260 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 2100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO-220
 

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NCEP023N85M Datasheet (PDF)

 ..1. Size:939K  ncepower
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NCEP023N85M

NCEP023N85M, NCEP023N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ex

 4.1. Size:940K  ncepower
 ncep023n85.pdf pdf_icon

NCEP023N85M

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 4.2. Size:940K  ncepower
 ncep023n85d.pdf pdf_icon

NCEP023N85M

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 4.3. Size:412K  ncepower
 ncep023n85 ncep023n85d.pdf pdf_icon

NCEP023N85M

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =260A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

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Datasheet: NCEP0218G , NCEP0218K , NCEP0220F , NCEP0225F , NCEP0225G , NCEP0225K , NCEP0230D , NCEP023N10T , 5N50 , NCEP023N85T , NCEP023NH30GU , NCEP02503S , NCEP02505S , NCEP02515F , NCEP02525G , NCEP02525K , NCEP02580D .

History: VS4618AP

Keywords - NCEP023N85M MOSFET datasheet

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