NCEP023N85M - аналоги и даташиты транзистора

 

NCEP023N85M - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCEP023N85M
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 260 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 37 ns
   Cossⓘ - Выходная емкость: 2100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCEP023N85M

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP023N85M Datasheet (PDF)

 ..1. Size:939K  ncepower
 ncep023n85m.pdf pdf_icon

NCEP023N85M

NCEP023N85M, NCEP023N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ex

 4.1. Size:940K  ncepower
 ncep023n85.pdf pdf_icon

NCEP023N85M

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 4.2. Size:940K  ncepower
 ncep023n85d.pdf pdf_icon

NCEP023N85M

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 4.3. Size:412K  ncepower
 ncep023n85 ncep023n85d.pdf pdf_icon

NCEP023N85M

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =260A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP0218G , NCEP0218K , NCEP0220F , NCEP0225F , NCEP0225G , NCEP0225K , NCEP0230D , NCEP023N10T , 5N50 , NCEP023N85T , NCEP023NH30GU , NCEP02503S , NCEP02505S , NCEP02515F , NCEP02525G , NCEP02525K , NCEP02580D .

History: IPP60R160P7 | RFK35N10 | NCEP023NH30GU | FK20SM-9 | 2N3687 | NCEP036N10MSL

 

 
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