NCEP026N85 Datasheet. Equivalente

 ..1. Size:978K  ncepower
 ncep026n85.pdf

NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10

 ..2. Size:978K  ncepower
 ncep026n85 ncep026n85d.pdf

NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10

 0.1. Size:978K  ncepower
 ncep026n85d.pdf

NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10

 6.1. Size:352K  ncepower
 ncep026n10m.pdf

NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an

 6.2. Size:683K  ncepower
 ncep026n10d.pdf

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 6.3. Size:302K  ncepower
 ncep026n10ll.pdf

NCEP026N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat

 6.4. Size:1504K  ncepower
 ncep026n10t.pdf

NCEP026N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =230A DS D switching performance. Both conduction and switching power R =2.15m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinat

 6.5. Size:683K  ncepower
 ncep026n10 ncep026n10d.pdf

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 6.6. Size:325K  ncepower
 ncep026n10f.pdf

NCEP026N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.9m , typical @ VGS=10V losses are minimized due to an extremely low combinat

 6.7. Size:683K  ncepower
 ncep026n10.pdf

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext