NCEP026N85 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCEP026N85
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 270 W
Предельно допустимое напряжение сток-исток |Uds|: 85 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 240 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 172 nC
Время нарастания (tr): 32 ns
Выходная емкость (Cd): 1850 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0026 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP026N85
NCEP026N85 Datasheet (PDF)
ncep026n85 ncep026n85d.pdf
NCEP026N85,NCEP026N85DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =240ADS Duniquely optimized to provide the most efficient high frequencyR =2.2m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =2.0m , typical (TO-263)@ V =10
ncep026n10m.pdf
NCEP026N10M, NCEP026N10MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an
ncep026n10ll.pdf
NCEP026N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat
ncep026n10t.pdf
NCEP026N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =230ADS Dswitching performance. Both conduction and switching powerR =2.15m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep026n10 ncep026n10d.pdf
NCEP026N10, NCEP026N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =200ADS Dswitching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext
ncep026n10f.pdf
NCEP026N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.9m , typical @ VGS=10V losses are minimized due to an extremely low combinat
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
