NCEP026N85 Datasheet. Specs and Replacement

Type Designator: NCEP026N85

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 240 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 1850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TO-220

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NCEP026N85 datasheet

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NCEP026N85

NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10... See More ⇒

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NCEP026N85

NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10... See More ⇒

 0.1. Size:978K  ncepower
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NCEP026N85

NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10... See More ⇒

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NCEP026N85

NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ... See More ⇒

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Detailed specifications: NCEP0260, NCEP0260D, NCEP026N10, NCEP026N10D, NCEP026N10F, NCEP026N10LL, NCEP026N10M, NCEP026N10T, IRFP250N, NCEP026N85D, NCEP028N12LL, NCEP028N60AGU, NCEP029N10, NCEP029N10D, NCEP02T10, NCEP02T10LL, NCEP02T10T

Keywords - NCEP026N85 MOSFET specs

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