NCEP028N60AGU Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP028N60AGU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 650 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm

Encapsulados: PDFN5X6-8L

 Búsqueda de reemplazo de NCEP028N60AGU MOSFET

- Selecciónⓘ de transistores por parámetros

 

NCEP028N60AGU datasheet

 ..1. Size:715K  ncepower
 ncep028n60agu.pdf pdf_icon

NCEP028N60AGU

http //www.ncepower.com NCEP028N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP028N60AGU uses Super Trench II technology that V =60V,I =100A DS D is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.7m (typical) @ V =4.5V DS(ON) GS switching

 6.1. Size:876K  ncepower
 ncep028n85d.pdf pdf_icon

NCEP028N60AGU

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =200A DS D switching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 6.2. Size:355K  ncepower
 ncep028n85 ncep028n85d.pdf pdf_icon

NCEP028N60AGU

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.55m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 6.3. Size:876K  ncepower
 ncep028n85.pdf pdf_icon

NCEP028N60AGU

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =200A DS D switching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

MOSTRAR MÁS

Otros transistores... NCEP026N10D, NCEP026N10F, NCEP026N10LL, NCEP026N10M, NCEP026N10T, NCEP026N85, NCEP026N85D, NCEP028N12LL, AON7408, NCEP029N10, NCEP029N10D, NCEP02T10, NCEP02T10LL, NCEP02T10T, NCEP02T11D, NCEP02T11T, NCEP030N12