NCEP028N60AGU Datasheet. Specs and Replacement

Type Designator: NCEP028N60AGU

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 650 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: PDFN5X6-8L

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NCEP028N60AGU datasheet

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NCEP028N60AGU

http //www.ncepower.com NCEP028N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP028N60AGU uses Super Trench II technology that V =60V,I =100A DS D is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.7m (typical) @ V =4.5V DS(ON) GS switching ... See More ⇒

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NCEP028N60AGU

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =200A DS D switching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

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NCEP028N60AGU

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.55m , typical (TO-220)@ VGS=10V losses are minimized due to an ex... See More ⇒

 6.3. Size:876K  ncepower
 ncep028n85.pdf pdf_icon

NCEP028N60AGU

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =200A DS D switching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

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Detailed specifications: NCEP026N10D, NCEP026N10F, NCEP026N10LL, NCEP026N10M, NCEP026N10T, NCEP026N85, NCEP026N85D, NCEP028N12LL, AON7408, NCEP029N10, NCEP029N10D, NCEP02T10, NCEP02T10LL, NCEP02T10T, NCEP02T11D, NCEP02T11T, NCEP030N12

Keywords - NCEP028N60AGU MOSFET specs

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