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NCEP028N60AGU Datasheet and Replacement


   Type Designator: NCEP028N60AGU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: PDFN5X6-8L
 

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NCEP028N60AGU Datasheet (PDF)

 ..1. Size:715K  ncepower
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NCEP028N60AGU

http://www.ncepower.com NCEP028N60AGUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP028N60AGU uses Super Trench II technology that V =60V,I =100ADS Dis uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =2.7m (typical) @ V =4.5VDS(ON) GSswitching

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 ncep028n85d.pdf pdf_icon

NCEP028N60AGU

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =200ADS Dswitching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 6.2. Size:355K  ncepower
 ncep028n85 ncep028n85d.pdf pdf_icon

NCEP028N60AGU

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.55m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 6.3. Size:876K  ncepower
 ncep028n85.pdf pdf_icon

NCEP028N60AGU

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =200ADS Dswitching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

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Datasheet: NCEP026N10D , NCEP026N10F , NCEP026N10LL , NCEP026N10M , NCEP026N10T , NCEP026N85 , NCEP026N85D , NCEP028N12LL , 2N7000 , NCEP029N10 , NCEP029N10D , NCEP02T10 , NCEP02T10LL , NCEP02T10T , NCEP02T11D , NCEP02T11T , NCEP030N12 .

History: BUK454-200A | CEB6030L | IRC840PBF | SUD08P06-155 | PSA10N65C | IRL7486MTRPBF | STP130N6F7

Keywords - NCEP028N60AGU MOSFET datasheet

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