NCEP028N60AGU datasheet, аналоги, основные параметры

Наименование производителя: NCEP028N60AGU

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 100 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

|VGSth|ⓘ - Пороговое напряжение включения: 2.5 V

Qg ⓘ - Общий заряд затвора: 70 nC

tr ⓘ - Время нарастания: 45 ns

Cossⓘ - Выходная емкость: 650 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm

Тип корпуса: PDFN5X6-8L

Аналог (замена) для NCEP028N60AGU

- подборⓘ MOSFET транзистора по параметрам

 

NCEP028N60AGU даташит

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 ncep028n60agu.pdf pdf_icon

NCEP028N60AGU

http //www.ncepower.com NCEP028N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP028N60AGU uses Super Trench II technology that V =60V,I =100A DS D is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.7m (typical) @ V =4.5V DS(ON) GS switching

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 ncep028n85d.pdf pdf_icon

NCEP028N60AGU

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =200A DS D switching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 6.2. Size:355K  ncepower
 ncep028n85 ncep028n85d.pdf pdf_icon

NCEP028N60AGU

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.55m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 6.3. Size:876K  ncepower
 ncep028n85.pdf pdf_icon

NCEP028N60AGU

NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =200A DS D switching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

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