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NCEP028N60AGU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEP028N60AGU
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 650 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: PDFN5X6-8L

 Аналог (замена) для NCEP028N60AGU

 

 

NCEP028N60AGU Datasheet (PDF)

 ..1. Size:715K  ncepower
 ncep028n60agu.pdf

NCEP028N60AGU NCEP028N60AGU

http://www.ncepower.com NCEP028N60AGUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP028N60AGU uses Super Trench II technology that V =60V,I =100ADS Dis uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =2.7m (typical) @ V =4.5VDS(ON) GSswitching

 6.1. Size:876K  ncepower
 ncep028n85d.pdf

NCEP028N60AGU NCEP028N60AGU

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =200ADS Dswitching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 6.2. Size:355K  ncepower
 ncep028n85 ncep028n85d.pdf

NCEP028N60AGU NCEP028N60AGU

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.55m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 6.3. Size:876K  ncepower
 ncep028n85.pdf

NCEP028N60AGU NCEP028N60AGU

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =200ADS Dswitching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 6.4. Size:324K  ncepower
 ncep028n12ll.pdf

NCEP028N60AGU NCEP028N60AGU

NCEP028N12LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =230A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combin

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