FQB44N10 Todos los transistores

 

FQB44N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB44N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 146 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 43.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm

Encapsulados: TO263 D2PAK

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FQB44N10 datasheet

 ..1. Size:1016K  fairchild semi
 fqb44n10 fqi44n10.pdf pdf_icon

FQB44N10

October 2008 QFET FQB44N10 / FQI44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especi

 ..2. Size:893K  onsemi
 fqb44n10.pdf pdf_icon

FQB44N10

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FQB33N10L , SDD03N70 , FQB34N20 , SDD03N50 , FQB34N20L , SDD03N04 , FQB34P10 , FQB34P10TMF085 , IRFB4110 , SDD02N70 , FQB47P06 , FQB4N80 , SDD02N60 , FQB50N06 , FQB50N06L , FQB55N10 , SDD01N70 .

History: BRFL4N65S

 

 

 

 

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