FQB44N10 Datasheet. Specs and Replacement

Type Designator: FQB44N10  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 146 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 43.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TO263 D2PAK

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FQB44N10 datasheet

 ..1. Size:1016K  fairchild semi
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FQB44N10

October 2008 QFET FQB44N10 / FQI44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especi... See More ⇒

 ..2. Size:893K  onsemi
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FQB44N10

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQB33N10L, SDD03N70, FQB34N20, SDD03N50, FQB34N20L, SDD03N04, FQB34P10, FQB34P10TMF085, 2N7002, SDD02N70, FQB47P06, FQB4N80, SDD02N60, FQB50N06, FQB50N06L, FQB55N10, SDD01N70

Keywords - FQB44N10 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs