All MOSFET. FQB44N10 Equivalents Search

 

FQB44N10 Spec and Replacement


   Type Designator: FQB44N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 146 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 43.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO263 D2PAK

 FQB44N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB44N10 Specs

 ..1. Size:1016K  fairchild semi
 fqb44n10 fqi44n10.pdf pdf_icon

FQB44N10

October 2008 QFET FQB44N10 / FQI44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especi... See More ⇒

 ..2. Size:893K  onsemi
 fqb44n10.pdf pdf_icon

FQB44N10

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQB33N10L , SDD03N70 , FQB34N20 , SDD03N50 , FQB34N20L , SDD03N04 , FQB34P10 , FQB34P10TMF085 , IRFB4110 , SDD02N70 , FQB47P06 , FQB4N80 , SDD02N60 , FQB50N06 , FQB50N06L , FQB55N10 , SDD01N70 .

Keywords - FQB44N10 MOSFET specs

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