All MOSFET. FQB44N10 Datasheet

 

FQB44N10 Datasheet and Replacement


   Type Designator: FQB44N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 146 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 43.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO263 D2PAK
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FQB44N10 Datasheet (PDF)

 ..1. Size:1016K  fairchild semi
 fqb44n10 fqi44n10.pdf pdf_icon

FQB44N10

October 2008QFETFQB44N10 / FQI44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especi

 ..2. Size:893K  onsemi
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FQB44N10

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FQB33N10L , SDD03N70 , FQB34N20 , SDD03N50 , FQB34N20L , SDD03N04 , FQB34P10 , FQB34P10TMF085 , IRFP260N , SDD02N70 , FQB47P06 , FQB4N80 , SDD02N60 , FQB50N06 , FQB50N06L , FQB55N10 , SDD01N70 .

History: UJ0100 | TSF5N65M | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

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