NCEP029N10D Todos los transistores

 

NCEP029N10D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEP029N10D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 275 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 185 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 1050 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
   Paquete / Cubierta: TO-263

 Búsqueda de reemplazo de MOSFET NCEP029N10D

 

NCEP029N10D Datasheet (PDF)

 ..1. Size:866K  ncepower
ncep029n10d.pdf

NCEP029N10D
NCEP029N10D

NCEP029N10,NCEP029N10Dhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =185ADS Duniquely optimized to provide the most efficient high frequencyR =2.6m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =2.4m

 ..2. Size:866K  ncepower
ncep029n10 ncep029n10d.pdf

NCEP029N10D
NCEP029N10D

NCEP029N10,NCEP029N10Dhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =185ADS Duniquely optimized to provide the most efficient high frequencyR =2.6m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =2.4m

 4.1. Size:866K  ncepower
ncep029n10.pdf

NCEP029N10D
NCEP029N10D

NCEP029N10,NCEP029N10Dhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =185ADS Duniquely optimized to provide the most efficient high frequencyR =2.6m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =2.4m

 8.1. Size:685K  ncepower
ncep020n60agu.pdf

NCEP029N10D
NCEP029N10D

NCEP020N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETGeneral FeaturesDescription V =60V,I =180ADS DThe NCEP020N60AGU uses Super Trench II technology thatR =1.8 m (typical) @ V =10VDS(ON) GSis uniquely optimized to provide the most efficient highR =2.5 m (typical) @ V =4.5VDS(ON) GSfrequency switching performance. Both conduction and

 8.2. Size:966K  ncepower
ncep020n10ll.pdf

NCEP029N10D
NCEP029N10D

NCEP020N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =330ADS Dswitching performance. Both conduction and switching power R =1.5m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat

 8.3. Size:352K  ncepower
ncep026n10m.pdf

NCEP029N10D
NCEP029N10D

NCEP026N10M, NCEP026N10MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an

 8.4. Size:337K  ncepower
ncep02590d.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02590DNCE N-Channel Super Trench Power MOSFET Description The NCEP02590D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.5. Size:323K  ncepower
ncep0225f.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP0225FNCE N-Channel Super Trench Power MOSFET Description The NCEP0225F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.6. Size:683K  ncepower
ncep026n10d.pdf

NCEP029N10D
NCEP029N10D

NCEP026N10, NCEP026N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =200ADS Dswitching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 8.7. Size:389K  ncepower
ncep02503s.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02503SNCE N-Channel Super Trench Power MOSFET Description The NCEP02503S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.8. Size:797K  ncepower
ncep023nh85agu.pdf

NCEP029N10D
NCEP029N10D

NCEP023NH85AGUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFET (Primary)Description General FeaturesThe NCEP023NH85AGU uses Super Trench III technology V =85V,I =250ADS Dthat is uniquely optimized to provide the most efficient high R =1.9m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =2.6m (typical) @ V =4.5VDS(ON)

 8.9. Size:410K  ncepower
ncep020n85d.pdf

NCEP029N10D
NCEP029N10D

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 8.10. Size:876K  ncepower
ncep028n85d.pdf

NCEP029N10D
NCEP029N10D

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =200ADS Dswitching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 8.11. Size:953K  ncepower
ncep025n85ll.pdf

NCEP029N10D
NCEP029N10D

Pb Free ProductNCEP025N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =260ADS Duniquely optimized to provide the most efficient high frequencyR =2.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product

 8.12. Size:326K  ncepower
ncep0225k.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP0225KNCE N-Channel Super Trench Power MOSFET Description The NCEP0225K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.13. Size:1320K  ncepower
ncep025n60.pdf

NCEP029N10D
NCEP029N10D

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

 8.14. Size:795K  ncepower
ncep020n85ll.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP020N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =295ADS Dswitching performance. Both conduction and switching powerR =1.6m , typical @ V =10VDS(ON) GSlosses are minimized due to a

 8.15. Size:355K  ncepower
ncep028n85 ncep028n85d.pdf

NCEP029N10D
NCEP029N10D

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.55m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 8.16. Size:855K  ncepower
ncep023n10d.pdf

NCEP029N10D
NCEP029N10D

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =240ADS Dswitching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 8.17. Size:398K  ncepower
ncep0218g.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP0218GNCE N-Channel Super Trench Power MOSFET Description The NCEP0218G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =18A frequency switching performance. Both conduction and RDS(ON)=70m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

 8.18. Size:2030K  ncepower
ncep023n10t.pdf

NCEP029N10D
NCEP029N10D

NCEP023N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =280ADS Dswitching performance. Both conduction and switching power R =1.85m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

 8.19. Size:687K  ncepower
ncep023nh85gu.pdf

NCEP029N10D
NCEP029N10D

NCEP023NH85GUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP023NH85GU uses Super Trench III technology that V =85V,I =245ADS Dis uniquely optimized to provide the most efficient highR =2.1m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and Excellent gate charge x R product(FOM)D

 8.20. Size:978K  ncepower
ncep026n85.pdf

NCEP029N10D
NCEP029N10D

NCEP026N85,NCEP026N85DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =240ADS Duniquely optimized to provide the most efficient high frequencyR =2.2m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =2.0m , typical (TO-263)@ V =10

 8.21. Size:635K  ncepower
ncep023n10 ncep023n10d.pdf

NCEP029N10D
NCEP029N10D

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =240A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 8.22. Size:939K  ncepower
ncep023n85m.pdf

NCEP029N10D
NCEP029N10D

NCEP023N85M, NCEP023N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ex

 8.23. Size:691K  ncepower
ncep0230d.pdf

NCEP029N10D
NCEP029N10D

Pb Free Producthttp://www.ncepower.com NCEP0230DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP0230D uses Super Trench II technology that is V =200V,I =30ADS Duniquely optimized to provide the most efficient highR =40m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and Excellent gate charge x R product(FO

 8.24. Size:1012K  ncepower
ncep0218k.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP0218KNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP0218K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switching

 8.25. Size:744K  ncepower
ncep02515f.pdf

NCEP029N10D
NCEP029N10D

Pb Free Producthttp://www.ncepower.com NCEP02515FNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02515F uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =250V,I =15ADS Dfrequency switching performance. Both conduction andR =220m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to

 8.26. Size:809K  ncepower
ncep020n30qu.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP020N30QUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =1.75m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.0m (typical) @ V =4.5V

 8.27. Size:940K  ncepower
ncep023n85.pdf

NCEP029N10D
NCEP029N10D

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 8.28. Size:940K  ncepower
ncep023n85d.pdf

NCEP029N10D
NCEP029N10D

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =260ADS Dswitching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an extr

 8.29. Size:339K  ncepower
ncep0220f.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP0220FNCE N-Channel Super Trench Power MOSFET Description The NCEP0220F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.30. Size:410K  ncepower
ncep020n85.pdf

NCEP029N10D
NCEP029N10D

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 8.31. Size:748K  ncepower
ncep025n60ag.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP025N60AGNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP025N60AG uses Super Trench II technology that is V =60V,I =165ADS Duniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5VDS(ON)

 8.32. Size:1131K  ncepower
ncep02t10t.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.comNCEP02T10TNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02T10T uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch

 8.33. Size:1320K  ncepower
ncep025n60 ncep025n60d.pdf

NCEP029N10D
NCEP029N10D

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

 8.34. Size:337K  ncepower
ncep02590t.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02590TNCE N-Channel Super Trench Power MOSFET Description The NCEP02590T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.35. Size:876K  ncepower
ncep028n85.pdf

NCEP029N10D
NCEP029N10D

NCEP028N85, NCEP028N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =200ADS Dswitching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 8.36. Size:357K  ncepower
ncep02525f.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02525FNCE N-Channel Super Trench Power MOSFET Description The NCEP02525F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.37. Size:356K  ncepower
ncep0225g.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP0225GNCE N-Channel Super Trench Power MOSFET Description The NCEP0225G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com

 8.38. Size:410K  ncepower
ncep020n85 ncep020n85d.pdf

NCEP029N10D
NCEP029N10D

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 8.39. Size:807K  ncepower
ncep025n30g.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP025N30GNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =85ADS Duniquely optimized to provide the most efficient high frequencyR =2.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.8m (typical) @ V =4.5V

 8.40. Size:322K  ncepower
ncep02t10d.pdf

NCEP029N10D
NCEP029N10D

Pb Free Producthttp://www.ncepower.com NCEP02T10DNCE N-Channel Super Trench Power MOSFET Description The NCEP02T10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 8.41. Size:816K  ncepower
ncep025f90d.pdf

NCEP029N10D
NCEP029N10D

NCEP025F90Dhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP025F90D uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =250V,I =90ADS Dfrequency switching performance. Both conduction and R

 8.42. Size:414K  ncepower
ncep02505s.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02505SNCE N-Channel Super Trench Power MOSFET Description The NCEP02505S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.43. Size:333K  ncepower
ncep02t11d.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02T11DNCE N-Channel Super Trench Power MOSFET Description The NCEP02T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Schematic diagram

 8.44. Size:800K  ncepower
ncep0260 ncep0260d.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.comNCEP0260,NCEP0260DNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench technology that is V =200V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =16.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x

 8.45. Size:324K  ncepower
ncep028n12ll.pdf

NCEP029N10D
NCEP029N10D

NCEP028N12LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =230A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combin

 8.46. Size:337K  ncepower
ncep025f90t.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP025F90TNCE N-Channel Super Trench Power MOSFET Description The NCEP025F90T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.47. Size:309K  ncepower
ncep02580.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02580NCE N-Channel Super Trench Power MOSFET Description The NCEP02580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.48. Size:302K  ncepower
ncep026n10ll.pdf

NCEP029N10D
NCEP029N10D

NCEP026N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat

 8.49. Size:336K  ncepower
ncep02590.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02590NCE N-Channel Super Trench Power MOSFET Description The NCEP02590 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.50. Size:926K  ncepower
ncep02525g.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02525GNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =250V,I =25ADS Dswitching performance. Both conduction and switching power R =72m (typical) @ V =10VDS(ON) GSlosses are minimized due to an extrem

 8.51. Size:978K  ncepower
ncep026n85 ncep026n85d.pdf

NCEP029N10D
NCEP029N10D

NCEP026N85,NCEP026N85DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =240ADS Duniquely optimized to provide the most efficient high frequencyR =2.2m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =2.0m , typical (TO-263)@ V =10

 8.52. Size:333K  ncepower
ncep025n60g.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP025N60GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)

 8.53. Size:800K  ncepower
ncep0260.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.comNCEP0260,NCEP0260DNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench technology that is V =200V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =16.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x

 8.54. Size:379K  ncepower
ncep02515k.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02515KNCE N-Channel Super Trench Power MOSFET Description The NCEP02515K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.55. Size:399K  ncepower
ncep020n85t.pdf

NCEP029N10D
NCEP029N10D

NCEP020N85TNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.6m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 8.56. Size:412K  ncepower
ncep023n85 ncep023n85d.pdf

NCEP029N10D
NCEP029N10D

NCEP023N85, NCEP023N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =260A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 8.57. Size:678K  ncepower
ncep020n60gu.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP020N60GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP020N60GU uses Super Trench II technology that is V =60V,I =180ADS Duniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product

 8.58. Size:750K  ncepower
ncep02t10.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.comNCEP02T10NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02T10 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchin

 8.59. Size:409K  ncepower
ncep023n10ll.pdf

NCEP029N10D
NCEP029N10D

NCEP023N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.7m , typical@ VGS=10V losses are minimized due to an extremely low combinat

 8.60. Size:400K  ncepower
ncep023n85t.pdf

NCEP029N10D
NCEP029N10D

NCEP023N85TNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =290A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.8m , typical@ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) product(FOM) lo

 8.61. Size:315K  ncepower
ncep0212f.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP0212FNCE N-Channel Super Trench Power MOSFET Description The NCEP0212F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch

 8.62. Size:410K  ncepower
ncep025n12ll.pdf

NCEP029N10D
NCEP029N10D

NCEP025N12LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =255A switching performance. Both conduction and switching power RDS(ON)=1.85m , typical@ VGS=10V losses are minimized due to an extremely low combina

 8.63. Size:790K  ncepower
ncep02t10ll.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.comNCEP02T10LLNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =200V,I =100ADS Duniquely optimized to provide the most efficient high frequency R =9.0m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product

 8.64. Size:433K  ncepower
ncep02525k.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02525KNCE N-Channel Super Trench Power MOSFET Description The NCEP02525K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 8.65. Size:1504K  ncepower
ncep026n10t.pdf

NCEP029N10D
NCEP029N10D

NCEP026N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =230ADS Dswitching performance. Both conduction and switching powerR =2.15m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat

 8.66. Size:290K  ncepower
ncep02580f.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02580FNCE N-Channel Super Trench Power MOSFET Description The NCEP02580F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 8.67. Size:978K  ncepower
ncep026n85d.pdf

NCEP029N10D
NCEP029N10D

NCEP026N85,NCEP026N85DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =240ADS Duniquely optimized to provide the most efficient high frequencyR =2.2m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =2.0m , typical (TO-263)@ V =10

 8.68. Size:1320K  ncepower
ncep025n60d.pdf

NCEP029N10D
NCEP029N10D

NCEP025N60, NCEP025N60DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =190ADS Dswitching performance. Both conduction and switching powerR =2.25m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely

 8.69. Size:683K  ncepower
ncep026n10 ncep026n10d.pdf

NCEP029N10D
NCEP029N10D

NCEP026N10, NCEP026N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =200ADS Dswitching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 8.70. Size:800K  ncepower
ncep0260d.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.comNCEP0260,NCEP0260DNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench technology that is V =200V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =16.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x

 8.71. Size:1038K  ncepower
ncep02580d.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.comNCEP02580DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP02580D uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequencyDS(ON) gswitch

 8.72. Size:855K  ncepower
ncep023n10.pdf

NCEP029N10D
NCEP029N10D

NCEP023N10, NCEP023N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =240ADS Dswitching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 8.73. Size:325K  ncepower
ncep026n10f.pdf

NCEP029N10D
NCEP029N10D

NCEP026N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.9m , typical @ VGS=10V losses are minimized due to an extremely low combinat

 8.74. Size:510K  ncepower
ncep020n30bqu.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP3065BQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065BQU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc

 8.75. Size:359K  ncepower
ncep020n30gu.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP020N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.75m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.0m (typical) @

 8.76. Size:713K  ncepower
ncep023nh30gu.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.comNCEP023NH30GUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP023NH30GU uses Super Trench III technologyV =30V,I =114ADS Dthat is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =3.3m (typical) @ V =4.5VDS(ON) GSswitchi

 8.77. Size:360K  ncepower
ncep0210q.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP0210QNCE N-Channel Super Trench Power MOSFET Description The NCEP0210Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =10A frequency switching performance. Both conduction and RDS(ON)=145m (typical) @ VGS=10V switching power losses are minimized due to an extremely low co

 8.78. Size:715K  ncepower
ncep028n60agu.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP028N60AGUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP028N60AGU uses Super Trench II technology that V =60V,I =100ADS Dis uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =2.7m (typical) @ V =4.5VDS(ON) GSswitching

 8.79. Size:683K  ncepower
ncep026n10.pdf

NCEP029N10D
NCEP029N10D

NCEP026N10, NCEP026N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =200ADS Dswitching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 8.80. Size:331K  ncepower
ncep02t11t.pdf

NCEP029N10D
NCEP029N10D

http://www.ncepower.com NCEP02T11TNCE N-Channel Super Trench Power MOSFET Description The NCEP02T11T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
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