NCEP029N10D datasheet, аналоги, основные параметры
Наименование производителя: NCEP029N10D
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 275 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 185 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
|VGSth|ⓘ - Пороговое напряжение включения: 4 V
Qg ⓘ - Общий заряд затвора: 185 nC
tr ⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 1050 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0029 Ohm
Тип корпуса: TO-263
Аналог (замена) для NCEP029N10D
- подборⓘ MOSFET транзистора по параметрам
NCEP029N10D даташит
ncep029n10d.pdf
NCEP029N10,NCEP029N10D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =185A DS D uniquely optimized to provide the most efficient high frequency R =2.6m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.4m
ncep029n10 ncep029n10d.pdf
NCEP029N10,NCEP029N10D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =185A DS D uniquely optimized to provide the most efficient high frequency R =2.6m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.4m
ncep029n10.pdf
NCEP029N10,NCEP029N10D http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =185A DS D uniquely optimized to provide the most efficient high frequency R =2.6m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.4m
ncep020n60agu.pdf
NCEP020N60AGU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET General Features Description V =60V,I =180A DS D The NCEP020N60AGU uses Super Trench II technology that R =1.8 m (typical) @ V =10V DS(ON) GS is uniquely optimized to provide the most efficient high R =2.5 m (typical) @ V =4.5V DS(ON) GS frequency switching performance. Both conduction and
ncep020n10ll.pdf
NCEP020N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =330A DS D switching performance. Both conduction and switching power R =1.5m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat
ncep026n10m.pdf
NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an
ncep02590d.pdf
http //www.ncepower.com NCEP02590D NCE N-Channel Super Trench Power MOSFET Description The NCEP02590D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep0225f.pdf
http //www.ncepower.com NCEP0225F NCE N-Channel Super Trench Power MOSFET Description The NCEP0225F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep026n10d.pdf
NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext
ncep02503s.pdf
http //www.ncepower.com NCEP02503S NCE N-Channel Super Trench Power MOSFET Description The NCEP02503S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep023nh85agu.pdf
NCEP023NH85AGU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET (Primary) Description General Features The NCEP023NH85AGU uses Super Trench III technology V =85V,I =250A DS D that is uniquely optimized to provide the most efficient high R =1.9m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.6m (typical) @ V =4.5V DS(ON)
ncep020n85d.pdf
NCEP020N85, NCEP020N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep028n85d.pdf
NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =200A DS D switching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext
ncep025n85ll.pdf
Pb Free Product NCEP025N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =260A DS D uniquely optimized to provide the most efficient high frequency R =2.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product
ncep0225k.pdf
http //www.ncepower.com NCEP0225K NCE N-Channel Super Trench Power MOSFET Description The NCEP0225K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep025n60.pdf
NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely
ncep020n85ll.pdf
http //www.ncepower.com NCEP020N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =295A DS D switching performance. Both conduction and switching power R =1.6m , typical @ V =10V DS(ON) GS losses are minimized due to a
ncep028n85 ncep028n85d.pdf
NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.55m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
ncep023n10d.pdf
NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =240A DS D switching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext
ncep0218g.pdf
http //www.ncepower.com NCEP0218G NCE N-Channel Super Trench Power MOSFET Description The NCEP0218G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =18A frequency switching performance. Both conduction and RDS(ON)=70m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com
ncep023n10t.pdf
NCEP023N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =280A DS D switching performance. Both conduction and switching power R =1.85m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinati
ncep023nh85gu.pdf
NCEP023NH85GU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP023NH85GU uses Super Trench III technology that V =85V,I =245A DS D is uniquely optimized to provide the most efficient high R =2.1m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) D
ncep026n85.pdf
NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10
ncep023n10 ncep023n10d.pdf
NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =240A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep023n85m.pdf
NCEP023N85M, NCEP023N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ex
ncep0230d.pdf
Pb Free Product http //www.ncepower.com NCEP0230D NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP0230D uses Super Trench II technology that is V =200V,I =30A DS D uniquely optimized to provide the most efficient high R =40m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FO
ncep0218k.pdf
http //www.ncepower.com NCEP0218K NCE N-Channel Super Trench Power MOSFET Description The NCEP0218K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switching
ncep02515f.pdf
Pb Free Product http //www.ncepower.com NCEP02515F NCE N-Channel Super Trench Power MOSFET Description The NCEP02515F uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =250V,I =15A DS D frequency switching performance. Both conduction and R =220m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to
ncep020n30qu.pdf
http //www.ncepower.com NCEP020N30QU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =30V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =1.75m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.0m (typical) @ V =4.5V
ncep023n85.pdf
NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr
ncep023n85d.pdf
NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =260A DS D switching performance. Both conduction and switching power R =2.0m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr
ncep0220f.pdf
http //www.ncepower.com NCEP0220F NCE N-Channel Super Trench Power MOSFET Description The NCEP0220F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep020n85.pdf
NCEP020N85, NCEP020N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep025n60ag.pdf
http //www.ncepower.com NCEP025N60AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60AG uses Super Trench II technology that is V =60V,I =165A DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5V DS(ON)
ncep02t10t.pdf
http //www.ncepower.com NCEP02T10T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch
ncep025n60 ncep025n60d.pdf
NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely
ncep02590t.pdf
http //www.ncepower.com NCEP02590T NCE N-Channel Super Trench Power MOSFET Description The NCEP02590T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep028n85.pdf
NCEP028N85, NCEP028N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =200A DS D switching performance. Both conduction and switching power R =2.55m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext
ncep02525f.pdf
http //www.ncepower.com NCEP02525F NCE N-Channel Super Trench Power MOSFET Description The NCEP02525F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep0225g.pdf
http //www.ncepower.com NCEP0225G NCE N-Channel Super Trench Power MOSFET Description The NCEP0225G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com
ncep020n85 ncep020n85d.pdf
NCEP020N85, NCEP020N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep025n30g.pdf
http //www.ncepower.com NCEP025N30G NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =30V,I =85A DS D uniquely optimized to provide the most efficient high frequency R =2.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =4.5V
ncep02t10d.pdf
Pb Free Product http //www.ncepower.com NCEP02T10D NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep025f90d.pdf
NCEP025F90D http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP025F90D uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =250V,I =90A DS D frequency switching performance. Both conduction and R
ncep02505s.pdf
http //www.ncepower.com NCEP02505S NCE N-Channel Super Trench Power MOSFET Description The NCEP02505S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep02t11d.pdf
http //www.ncepower.com NCEP02T11D NCE N-Channel Super Trench Power MOSFET Description The NCEP02T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Schematic diagram
ncep0260 ncep0260d.pdf
http //www.ncepower.com NCEP0260,NCEP0260D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =200V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =16.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x
ncep028n12ll.pdf
NCEP028N12LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =230A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combin
ncep025f90t.pdf
http //www.ncepower.com NCEP025F90T NCE N-Channel Super Trench Power MOSFET Description The NCEP025F90T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep02580.pdf
http //www.ncepower.com NCEP02580 NCE N-Channel Super Trench Power MOSFET Description The NCEP02580 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep026n10ll.pdf
NCEP026N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat
ncep02590.pdf
http //www.ncepower.com NCEP02590 NCE N-Channel Super Trench Power MOSFET Description The NCEP02590 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep02525g.pdf
http //www.ncepower.com NCEP02525G NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =250V,I =25A DS D switching performance. Both conduction and switching power R =72m (typical) @ V =10V DS(ON) GS losses are minimized due to an extrem
ncep026n85 ncep026n85d.pdf
NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10
ncep025n60g.pdf
http //www.ncepower.com NCEP025N60G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60G uses Super Trench II technology that is VDS =60V,ID =165A uniquely optimized to provide the most efficient high frequency RDS(ON)=2.2m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on)
ncep0260.pdf
http //www.ncepower.com NCEP0260,NCEP0260D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =200V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =16.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x
ncep02515k.pdf
http //www.ncepower.com NCEP02515K NCE N-Channel Super Trench Power MOSFET Description The NCEP02515K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep020n85t.pdf
NCEP020N85T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.6m , typical @ VGS=10V losses are minimized due to an extremely low combinati
ncep023n85 ncep023n85d.pdf
NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =260A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep020n60gu.pdf
http //www.ncepower.com NCEP020N60GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP020N60GU uses Super Trench II technology that is V =60V,I =180A DS D uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product
ncep02t10.pdf
http //www.ncepower.com NCEP02T10 NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchin
ncep023n10ll.pdf
NCEP023N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.7m , typical@ VGS=10V losses are minimized due to an extremely low combinat
ncep023n85t.pdf
NCEP023N85T NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =290A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.8m , typical@ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) product(FOM) lo
ncep0212f.pdf
http //www.ncepower.com NCEP0212F NCE N-Channel Super Trench Power MOSFET Description The NCEP0212F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch
ncep025n12ll.pdf
NCEP025N12LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =255A switching performance. Both conduction and switching power RDS(ON)=1.85m , typical@ VGS=10V losses are minimized due to an extremely low combina
ncep02t10ll.pdf
http //www.ncepower.com NCEP02T10LL NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =200V,I =100A DS D uniquely optimized to provide the most efficient high frequency R =9.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product
ncep02525k.pdf
http //www.ncepower.com NCEP02525K NCE N-Channel Super Trench Power MOSFET Description The NCEP02525K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep026n10t.pdf
NCEP026N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =230A DS D switching performance. Both conduction and switching power R =2.15m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinat
ncep02580f.pdf
http //www.ncepower.com NCEP02580F NCE N-Channel Super Trench Power MOSFET Description The NCEP02580F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep026n85d.pdf
NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10
ncep025n60d.pdf
NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely
ncep026n10 ncep026n10d.pdf
NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext
ncep0260d.pdf
http //www.ncepower.com NCEP0260,NCEP0260D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =200V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =16.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x
ncep02580d.pdf
http //www.ncepower.com NCEP02580D NCE N-Channel Super Trench Power MOSFET Description The NCEP02580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency DS(ON) g switch
ncep023n10.pdf
NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =240A DS D switching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext
ncep026n10f.pdf
NCEP026N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.9m , typical @ VGS=10V losses are minimized due to an extremely low combinat
ncep020n30bqu.pdf
http //www.ncepower.com NCEP3065BQU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065BQU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc
ncep020n30gu.pdf
http //www.ncepower.com NCEP020N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.75m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.0m (typical) @
ncep023nh30gu.pdf
http //www.ncepower.com NCEP023NH30GU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP023NH30GU uses Super Trench III technology V =30V,I =114A DS D that is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =3.3m (typical) @ V =4.5V DS(ON) GS switchi
ncep0210q.pdf
http //www.ncepower.com NCEP0210Q NCE N-Channel Super Trench Power MOSFET Description The NCEP0210Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =10A frequency switching performance. Both conduction and RDS(ON)=145m (typical) @ VGS=10V switching power losses are minimized due to an extremely low co
ncep028n60agu.pdf
http //www.ncepower.com NCEP028N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP028N60AGU uses Super Trench II technology that V =60V,I =100A DS D is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.7m (typical) @ V =4.5V DS(ON) GS switching
ncep026n10.pdf
NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext
ncep02t11t.pdf
http //www.ncepower.com NCEP02T11T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T11T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
Другие IGBT... NCEP026N10LL, NCEP026N10M, NCEP026N10T, NCEP026N85, NCEP026N85D, NCEP028N12LL, NCEP028N60AGU, NCEP029N10, STP75NF75, NCEP02T10, NCEP02T10LL, NCEP02T10T, NCEP02T11D, NCEP02T11T, NCEP030N12, NCEP030N12D, NCEP030N30GU
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