NCEP029N10D Datasheet. Specs and Replacement
Type Designator: NCEP029N10D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 275 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 185 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 1050 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO-263
NCEP029N10D substitution
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NCEP029N10D datasheet
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Pb Free Product NCEP025N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =260A DS D uniquely optimized to provide the most efficient high frequency R =2.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product... See More ⇒
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http //www.ncepower.com NCEP020N85LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =295A DS D switching performance. Both conduction and switching power R =1.6m , typical @ V =10V DS(ON) GS losses are minimized due to a... See More ⇒
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NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =240A DS D switching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒
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Pb Free Product http //www.ncepower.com NCEP0230D NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP0230D uses Super Trench II technology that is V =200V,I =30A DS D uniquely optimized to provide the most efficient high R =40m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FO... See More ⇒
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http //www.ncepower.com NCEP020N30QU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =30V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =1.75m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.0m (typical) @ V =4.5V... See More ⇒
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ncep020n85.pdf
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ncep028n85.pdf
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ncep0225g.pdf
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ncep02t10d.pdf
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ncep020n85t.pdf
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ncep023n85 ncep023n85d.pdf
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ncep020n60gu.pdf
http //www.ncepower.com NCEP020N60GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP020N60GU uses Super Trench II technology that is V =60V,I =180A DS D uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product... See More ⇒
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ncep023n10ll.pdf
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ncep023n85t.pdf
NCEP023N85T NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =290A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.8m , typical@ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) product(FOM) lo... See More ⇒
ncep0212f.pdf
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NCEP026N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =230A DS D switching performance. Both conduction and switching power R =2.15m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinat... See More ⇒
ncep02580f.pdf
http //www.ncepower.com NCEP02580F NCE N-Channel Super Trench Power MOSFET Description The NCEP02580F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
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NCEP026N85,NCEP026N85D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =240A DS D uniquely optimized to provide the most efficient high frequency R =2.2m , typical (TO-220)@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.0m , typical (TO-263)@ V =10... See More ⇒
ncep025n60d.pdf
NCEP025N60, NCEP025N60D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =190A DS D switching performance. Both conduction and switching power R =2.25m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely ... See More ⇒
ncep026n10 ncep026n10d.pdf
NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒
ncep0260d.pdf
http //www.ncepower.com NCEP0260,NCEP0260D NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =200V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =16.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x... See More ⇒
ncep02580d.pdf
http //www.ncepower.com NCEP02580D NCE N-Channel Super Trench Power MOSFET Description The NCEP02580D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency DS(ON) g switch... See More ⇒
ncep023n10.pdf
NCEP023N10, NCEP023N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =240A DS D switching performance. Both conduction and switching power R =2.1m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒
ncep026n10f.pdf
NCEP026N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.9m , typical @ VGS=10V losses are minimized due to an extremely low combinat... See More ⇒
ncep020n30bqu.pdf
http //www.ncepower.com NCEP3065BQU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065BQU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc... See More ⇒
ncep020n30gu.pdf
http //www.ncepower.com NCEP020N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.75m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.0m (typical) @... See More ⇒
ncep023nh30gu.pdf
http //www.ncepower.com NCEP023NH30GU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP023NH30GU uses Super Trench III technology V =30V,I =114A DS D that is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =3.3m (typical) @ V =4.5V DS(ON) GS switchi... See More ⇒
ncep0210q.pdf
http //www.ncepower.com NCEP0210Q NCE N-Channel Super Trench Power MOSFET Description The NCEP0210Q uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =200V,ID =10A frequency switching performance. Both conduction and RDS(ON)=145m (typical) @ VGS=10V switching power losses are minimized due to an extremely low co... See More ⇒
ncep028n60agu.pdf
http //www.ncepower.com NCEP028N60AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP028N60AGU uses Super Trench II technology that V =60V,I =100A DS D is uniquely optimized to provide the most efficient high R =2.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =2.7m (typical) @ V =4.5V DS(ON) GS switching ... See More ⇒
ncep026n10.pdf
NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒
ncep02t11t.pdf
http //www.ncepower.com NCEP02T11T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T11T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
Detailed specifications: NCEP026N10LL, NCEP026N10M, NCEP026N10T, NCEP026N85, NCEP026N85D, NCEP028N12LL, NCEP028N60AGU, NCEP029N10, STP75NF75, NCEP02T10, NCEP02T10LL, NCEP02T10T, NCEP02T11D, NCEP02T11T, NCEP030N12, NCEP030N12D, NCEP030N30GU
Keywords - NCEP029N10D MOSFET specs
NCEP029N10D cross reference
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NCEP029N10D pdf lookup
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NCEP029N10D replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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